Microchip Technology, Inc. Single FETs, MOSFETs TP5322N8-G

Description
P-Channel 220V 260mA (Tj) 1.6W (Ta) Surface Mount TO-243AA (SOT-89)
Request a Quote Datasheet
Description
P-Channel 220V 260mA (Tj) 1.6W (Ta) Surface Mount TO-243AA (SOT-89)
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - TP5322N8-G-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
TP5322N8-G-ND
Single FETs, MOSFETs TP5322N8-G-ND
P-Channel 220V 260mA (Tj) 1.6W (Ta) Surface Mount TO-243AA (SOT-89)

P-Channel 220V 260mA (Tj) 1.6W (Ta) Surface Mount TO-243AA (SOT-89)

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - TP5322N8-G - 043247-TP5322N8-G - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - TP5322N8-G
043247-TP5322N8-G
TRANSISTORS - Transistors - FETs, MOSFETs - RF - TP5322N8-G 043247-TP5322N8-G
Manufacturer: Microchip Technology Win Source Part Number: 043247-TP5322N8-G Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 1.6W (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-243AA (SOT-89) Dimension: TO-243AA Drain-Source Breakdown Voltage: 220V Continuous Drain Current at 25°C: 260mA (Tj) Gate-Source Threshold Voltage: 2.4V @ 1mA Max Input Capacitance: 110pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 12 Ohm @ 200mA, 10V Popularity: Medium Fake Threat In the Open Market: 58 pct. Supply and Demand Status: Balance

Manufacturer: Microchip Technology
Win Source Part Number: 043247-TP5322N8-G
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 1.6W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-243AA (SOT-89)
Dimension: TO-243AA
Drain-Source Breakdown Voltage: 220V
Continuous Drain Current at 25°C: 260mA (Tj)
Gate-Source Threshold Voltage: 2.4V @ 1mA
Max Input Capacitance: 110pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 12 Ohm @ 200mA, 10V
Popularity: Medium
Fake Threat In the Open Market: 58 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Singapore
220V 260MA MOSFET Transistor
278-TP5322N8-G
220V 260MA MOSFET Transistor 278-TP5322N8-G
MOSFET P-CH 220V 260MA TO243AA Product overview: TP5322N8-G from Microchip Technology is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 220V, 260MA. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 220V, 260MA, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-TP5322N8-G can be used for catalog matching and distributor lookup.

MOSFET P-CH 220V 260MA TO243AA Product overview: TP5322N8-G from Microchip Technology is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 220V, 260MA. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 220V, 260MA, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-TP5322N8-G can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Sheung Wan, Hong Kong
MOSFET 220V 12 Ohm 0.7A

MOSFET 220V 12 Ohm 0.7A

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - TP5322N8-G - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
TP5322N8-G
Discrete Semiconductor Products - Transistors - FETs, MOSFETs TP5322N8-G
MOSFET P-CH 220V 260MA TO243AA

MOSFET P-CH 220V 260MA TO243AA

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics ERSAELECTRONICS PTE. LTD. VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number TP5322N8-G-ND 043247-TP5322N8-G 278-TP5322N8-G TP5322N8-G TP5322N8-G
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - TP5322N8-G 220V 260MA MOSFET Transistor MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity P-Channel P-Channel; P-Channel P-Channel
Package Type TO-243AA SOT3; SOT89; TO-243AA (SOT-89) Tape & Reel (TR) -55degC ~ 150degC (TJ)
V(BR)DSS 220 volts 220 volts
PD 1600 milliwatts 1.6 milliwatts
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