Microchip Technology, Inc. Single FETs, MOSFETs TP2640N3-G

Description
P-Channel 400V 180mA (Tj) 1W (Ta) Through Hole TO-92-3
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Description
P-Channel 400V 180mA (Tj) 1W (Ta) Through Hole TO-92-3
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - TP2640N3-G-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
TP2640N3-G-ND
Single FETs, MOSFETs TP2640N3-G-ND
P-Channel 400V 180mA (Tj) 1W (Ta) Through Hole TO-92-3

P-Channel 400V 180mA (Tj) 1W (Ta) Through Hole TO-92-3

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FETs - Single - TP2640N3-G - 1271690-TP2640N3-G - Win Source Electronics
Laguna Hills, CA, United States
FETs - Single - TP2640N3-G
1271690-TP2640N3-G
FETs - Single - TP2640N3-G 1271690-TP2640N3-G
Manufacturer: Microchip Technology Win Source Part Number: 1271690-TP2640N3-G Packaging: Bulk Mounting Style: Through Hole Technology: MOSFET Transistor Polarity: P-Channel Categories: Discrete Semiconductor Products Supplier Device Package: TO-92-3 Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Temperature Range - Operating: -55°C ~ 150°C Manufacturer Homepage: www.supertex.com Manufacturer Package: TO-226-3, TO-92-3 (TO-226AA) Power Dissipation (Maximum): 1W Popularity: Medium Fake Threat In the Open Market: 31 pct. Supply and Demand Status: Limited Manufacturer Pack Quantity: 1,000 MSL Level: 1 (Unlimited) Vds - Drain-Source Breakdown Voltage: 400V Id - Continuous Drain Current: 180mA Rds On (Maximum) at Id, Vgs: 15Ohm at 300mA, 10V Gate Source Voltage(th) (Maximum) at Id: 2V at 1mA Gate Source Voltage (Maximum): ±20V Input Capacitance (Ciss) (Maximum) at Vds: 300pF at 25V

Manufacturer: Microchip Technology
Win Source Part Number: 1271690-TP2640N3-G
Packaging: Bulk
Mounting Style: Through Hole
Technology: MOSFET
Transistor Polarity: P-Channel
Categories: Discrete Semiconductor Products
Supplier Device Package: TO-92-3
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Temperature Range - Operating: -55°C ~ 150°C
Manufacturer Homepage: www.supertex.com
Manufacturer Package: TO-226-3, TO-92-3 (TO-226AA)
Power Dissipation (Maximum): 1W
Popularity: Medium
Fake Threat In the Open Market: 31 pct.
Supply and Demand Status: Limited
Manufacturer Pack Quantity: 1,000
MSL Level: 1 (Unlimited)
Vds - Drain-Source Breakdown Voltage: 400V
Id - Continuous Drain Current: 180mA
Rds On (Maximum) at Id, Vgs: 15Ohm at 300mA, 10V
Gate Source Voltage(th) (Maximum) at Id: 2V at 1mA
Gate Source Voltage (Maximum): ±20V
Input Capacitance (Ciss) (Maximum) at Vds: 300pF at 25V

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Discrete Semiconductor Products - Transistors - FETs, MOSFETs - TP2640N3-G - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
TP2640N3-G
Discrete Semiconductor Products - Transistors - FETs, MOSFETs TP2640N3-G
MOSFET P-CH 400V 180MA TO92-3

MOSFET P-CH 400V 180MA TO92-3

Supplier's Site
Sheung Wan, Hong Kong
MOSFET 400V 15Ohm

MOSFET 400V 15Ohm

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Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number TP2640N3-G-ND 1271690-TP2640N3-G TP2640N3-G TP2640N3-G
Product Name Single FETs, MOSFETs FETs - Single - TP2640N3-G Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET
Polarity P-Channel P-Channel; P-Channel
Package Type TO-92; TO-226-3, TO-92-3 (TO-226AA) TO-92; SOT3 300 pF @ 25 V
MOSFET Operating Mode Enhancement
V(BR)DSS 400 volts
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