Microchip Technology, Inc. Single FETs, MOSFETs TP2635N3-G

P-Channel 350V 180mA (Tj) 1W (Ta) Through Hole TO-92-3

Win Source Part Number: 1006013-TP2635N3-G
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Package: Bag
Standard Package: 1,000
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Drain to Source Voltage (Vdss): 350 V
Current - Continuous Drain (Id) @ 25°C: 180mA (Tj)
Rds On (Max) @ Id, Vgs: 15Ohm @ 300mA, 10V
Vgs(th) (Max) @ Id: 2V @ 1mA
Power Dissipation (Max): 1W (Ta)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package: TO-92-3
Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 25 V
Vgs (Max): ±20V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 54 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: Microchip Technology
Base Product Number: TP2635
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V

MOSFET P-CH 350V 180MA TO92-3 Product overview: TP2635N3-G from Microchip Technology is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 350V, 180MA. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 350V, 180MA, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-TP2635N3-G can be used for catalog matching and distributor lookup.