MOSFET P-CH 350V 180MA TO92-3 Product overview: TP2635N3-G from Microchip Technology is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 350V, 180MA. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 350V, 180MA, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-TP2635N3-G can be used for catalog matching and distributor lookup.
Win Source Part Number: 1006013-TP2635N3-G
Category: Discrete Semiconductor Products>Transistors
Package: Bag
Standard Package: 1,000
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Drain to Source Voltage (Vdss): 350 V
Current - Continuous Drain (Id) @ 25°C: 180mA (Tj)
Rds On (Max) @ Id, Vgs: 15Ohm @ 300mA, 10V
Vgs(th) (Max) @ Id: 2V @ 1mA
Power Dissipation (Max): 1W (Ta)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package: TO-92-3
Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 25 V
Vgs (Max): ±20V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 54 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: Microchip Technology
Base Product Number: TP2635
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
P-Channel 350V 180mA (Tj) 1W (Ta) Through Hole TO-92-3
MOSFET P-CH 350V 180MA TO92-3
MOSFET P-CH 350V 180MA TO92-3
MOSFET,P-CHANNEL ENHANCEMENT-MODE,-35
| ERSAELECTRONICS PTE. LTD. | Win Source Electronics | DigiKey | ODG (Origin Data Global) | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | Utmel Electronic Limited | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 278-TP2635N3-G | 1006013-TP2635N3-G | TP2635N3-G-ND | TP2635N3-G | TP2635N3-G | TP2635N3-G | 536-TP2635N3-G |
| Product Name | 350V 180MA MOSFET Transistor | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single | Single FETs, MOSFETs | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET | MOSFET,P-CHANNEL ENHANCEMENT-MODE,-350V,15 Ohm3 TO-92BAG |
| Polarity | P-Channel | P-Channel | P-Channel | P-Channel; P-Channel | P-Channel | ||
| MOSFET Operating Mode | Enhancement | Enhancement; ENHANCEMENT MODE | |||||
| V(BR)DSS | 350 volts | 350 volts | -350 volts | ||||
| PD | 1 milliwatts | 1000 milliwatts | 1000 milliwatts | 1000 milliwatts | |||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) |
