P-Channel 350V 86mA (Tj) 740mW (Ta) Through Hole TO-92-3
MOSFET P-CH 350V 86MA TO92-3 Product overview: TP2535N3-G from Microchip Technology is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 350V, 86MA. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 350V, 86MA, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-TP2535N3-G can be used for catalog matching and distributor lookup.
Manufacturer: Microchip Technology
Win Source Part Number: 1271685-TP2535N3-G
Packaging: Bulk
Mounting Style: Through Hole
Technology: MOSFET
Transistor Polarity: P-Channel
Categories: Discrete Semiconductor Products
Supplier Device Package: TO-92-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Temperature Range - Operating: -55°C ~ 150°C
Manufacturer Homepage: www.supertex.com
Manufacturer Package: TO-226-3, TO-92-3 (TO-226AA)
Power Dissipation (Maximum): 740mW
Popularity: Medium
Fake Threat In the Open Market: 47 pct.
Supply and Demand Status: Limited
Manufacturer Pack Quantity: 1,000
MSL Level: 1 (Unlimited)
Vds - Drain-Source Breakdown Voltage: 350V
Id - Continuous Drain Current: 86mA
Rds On (Maximum) at Id, Vgs: 25Ohm at 100mA, 10V
Gate Source Voltage(th) (Maximum) at Id: 2.4V at 1mA
Gate Source Voltage (Maximum): ±20V
Input Capacitance (Ciss) (Maximum) at Vds: 125pF at 25V
MOSFET P-CH 350V 86MA TO92-3
| DigiKey | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | TP2535N3-G-ND | 278-TP2535N3-G | 1271685-TP2535N3-G | TP2535N3-G | TP2535N3-G |
| Product Name | Single FETs, MOSFETs | 350V 86MA MOSFET Transistor | FETs - Single - TP2535N3-G | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | P-Channel | P-Channel | P-Channel; P-Channel | ||
| Package Type | TO-92; TO-226-3, TO-92-3 (TO-226AA) | Bag | TO-92; SOT3 | TO-92; TO-226-3, TO-92-3 (TO-226AA) | |
| MOSFET Operating Mode | Enhancement | Enhancement | |||
| V(BR)DSS | 350 volts | 350 volts |
