Manufacturer: Microchip Technology
Win Source Part Number: 1110978-TP2520N8-G
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 1.6W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-243AA (SOT-89)
Dimension: TO-243AA
Drain-Source Breakdown Voltage: 200V
Continuous Drain Current at 25°C: 260mA (Tj)
Gate-Source Threshold Voltage: 2.4V @ 1mA
Max Input Capacitance: 125pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 12 Ohm @ 200mA, 10V
Popularity: Medium
Fake Threat In the Open Market: 43 pct.
Supply and Demand Status: Balance
P-Channel 200V 260mA (Tj) 1.6W (Ta) Surface Mount TO-243AA (SOT-89)
P-Channel 200V 260mA (Tj) 1.6W (Ta) Surface Mount TO-243AA (SOT-89)
P-Channel 200V 260mA (Tj) 1.6W (Ta) Surface Mount TO-243AA (SOT-89)
MOSFET P-CH 200V 260MA TO243AA
| Win Source Electronics | DigiKey | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 1110978-TP2520N8-G | TP2520N8-GTR-ND | TP2520N8-G | TP2520N8-G |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - TP2520N8-G | Single FETs, MOSFETs | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | P-Channel; P-Channel | P-Channel | ||
| V(BR)DSS | 200 volts | |||
| PD | 1600 milliwatts |
