MOSFET P-CH 40V 160MA TO236AB
MOSFET P-CH 40V 160MA TO236AB Product overview: TP2104K1-G from Microchip Technology is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 40V, 160MA. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 40V, 160MA, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-TP2104K1-G can be used for catalog matching and distributor lookup.
Manufacturer: Microchip Technology
Win Source Part Number: 1110973-TP2104K1-G
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 360mW (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C
Case / Package: TO-236AB (SOT23)
Dimension: TO-236-3, SC-59, SOT-23-3
Drain-Source Breakdown Voltage: 40V
Continuous Drain Current at 25°C: 160mA (Tj)
Gate-Source Threshold Voltage: 2V @ 1mA
Max Input Capacitance: 60pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 6 Ohm @ 500mA, 10V
Popularity: Medium
Fake Threat In the Open Market: 57 pct.
Supply and Demand Status: Balance
MOSFET, P-CHANNEL ENHANCEMENT-MODE, -40V
MOSFET, P-CHANNEL ENHANCEMENT-MODE, -40V
MOSFET, P-CHANNEL ENHANCEMENT-MODE, -40V
P-Channel 40V 160mA (Tj) 360mW (Ta) Surface Mount TO-236AB (SOT23)
P-Channel 40V 160mA (Tj) 360mW (Ta) Surface Mount TO-236AB (SOT23)
P-Channel 40V 160mA (Tj) 360mW (Ta) Surface Mount TO-236AB (SOT23)
D-MOSFET, P-CH, -0.16A, -40V, TO-236AB-3; Transistor Polarity:P Channel; Continuous Drain Current Id:-160mA; Drain Source Voltage Vds:-40V; On Resistance Rds(on):6ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-2V; Power RoHS Compliant: Yes
MOSFET P-CH 40V 160MA TO236AB
MOSFET P-CH 40V 0.16A SOT23-3
| ODG (Origin Data Global) | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | RS Components, Ltd. | DigiKey | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | Utmel Electronic Limited | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | TP2104K1-G | 278-TP2104K1-G | 1110973-TP2104K1-G | 2648930P | TP2104K1-GTR-ND | 55AC4222 | TP2104K1-G | 536-TP2104K1-G |
| Product Name | Single FETs, MOSFETs | 40V 160MA MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - TP2104K1-G | MOSFETs | Single FETs, MOSFETs | D-Mosfet, P-Ch, -0.16A, -40V, To-236Ab-3; Transistor Polarity Microchip | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET P-CH 40V 0.16A SOT23-3 |
| Polarity | P-Channel; P-Channel | P-Channel | P-Channel; P-Channel | P-Channel | P-Channel | |||
| Transistor Technology / Material | MOSFET (Metal Oxide) | SILICON | ||||||
| V(BR)DSS | 40 volts | 40 volts | 40 volts | -40 volts | ||||
| IDSS | 160 milliamps | -160 milliamps | ||||||
| PD | 360 milliwatts | 360 milliwatts | 360 milliwatts | 360 milliwatts |
