Microchip Technology, Inc. MOSFETs TP2104K1-G

Description
MOSFET, P-CHANNEL ENHANCEMENT-MODE, -40V
Request a Quote Datasheet
Description
MOSFET, P-CHANNEL ENHANCEMENT-MODE, -40V
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
MOSFETs - 2648930P - RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
2648930P
MOSFETs 2648930P
MOSFET, P-CHANNEL ENHANCEMENT-MODE, -40V

MOSFET, P-CHANNEL ENHANCEMENT-MODE, -40V

Supplier's Site
MOSFETs - 2648928 - RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
2648928
MOSFETs 2648928
MOSFET, P-CHANNEL ENHANCEMENT-MODE, -40V

MOSFET, P-CHANNEL ENHANCEMENT-MODE, -40V

Supplier's Site
MOSFETs - 2648930 - RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
2648930
MOSFETs 2648930
MOSFET, P-CHANNEL ENHANCEMENT-MODE, -40V

MOSFET, P-CHANNEL ENHANCEMENT-MODE, -40V

Supplier's Site
Single FETs, MOSFETs - TP2104K1-G - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
TP2104K1-G
Single FETs, MOSFETs TP2104K1-G
MOSFET P-CH 40V 160MA TO236AB

MOSFET P-CH 40V 160MA TO236AB

Supplier's Site Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - TP2104K1-G - 1110973-TP2104K1-G - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - TP2104K1-G
1110973-TP2104K1-G
TRANSISTORS - Transistors - FETs, MOSFETs - RF - TP2104K1-G 1110973-TP2104K1-G
Manufacturer: Microchip Technology Win Source Part Number: 1110973-TP2104K1-G Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 360mW (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C Case / Package: TO-236AB (SOT23) Dimension: TO-236-3, SC-59, SOT-23-3 Drain-Source Breakdown Voltage: 40V Continuous Drain Current at 25°C: 160mA (Tj) Gate-Source Threshold Voltage: 2V @ 1mA Max Input Capacitance: 60pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 6 Ohm @ 500mA, 10V Popularity: Medium Fake Threat In the Open Market: 57 pct. Supply and Demand Status: Balance

Manufacturer: Microchip Technology
Win Source Part Number: 1110973-TP2104K1-G
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 360mW (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C
Case / Package: TO-236AB (SOT23)
Dimension: TO-236-3, SC-59, SOT-23-3
Drain-Source Breakdown Voltage: 40V
Continuous Drain Current at 25°C: 160mA (Tj)
Gate-Source Threshold Voltage: 2V @ 1mA
Max Input Capacitance: 60pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 6 Ohm @ 500mA, 10V
Popularity: Medium
Fake Threat In the Open Market: 57 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Single FETs, MOSFETs - TP2104K1-GTR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
TP2104K1-GTR-ND
Single FETs, MOSFETs TP2104K1-GTR-ND
P-Channel 40V 160mA (Tj) 360mW (Ta) Surface Mount TO-236AB (SOT23)

P-Channel 40V 160mA (Tj) 360mW (Ta) Surface Mount TO-236AB (SOT23)

Buy Now Datasheet
Single FETs, MOSFETs - TP2104K1-GCT-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
TP2104K1-GCT-ND
Single FETs, MOSFETs TP2104K1-GCT-ND
P-Channel 40V 160mA (Tj) 360mW (Ta) Surface Mount TO-236AB (SOT23)

P-Channel 40V 160mA (Tj) 360mW (Ta) Surface Mount TO-236AB (SOT23)

Buy Now Datasheet
Single FETs, MOSFETs - TP2104K1-GDKR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
TP2104K1-GDKR-ND
Single FETs, MOSFETs TP2104K1-GDKR-ND
P-Channel 40V 160mA (Tj) 360mW (Ta) Surface Mount TO-236AB (SOT23)

P-Channel 40V 160mA (Tj) 360mW (Ta) Surface Mount TO-236AB (SOT23)

Buy Now Datasheet
D-Mosfet, P-Ch, -0.16A, -40V, To-236Ab-3; Transistor Polarity Microchip - 55AC4222 - Newark, An Avnet Company
Chicago, IL, United States
D-Mosfet, P-Ch, -0.16A, -40V, To-236Ab-3; Transistor Polarity Microchip
55AC4222
D-Mosfet, P-Ch, -0.16A, -40V, To-236Ab-3; Transistor Polarity Microchip 55AC4222
D-MOSFET, P-CH, -0.16A, -40V, TO-236AB-3; Transistor Polarity:P Channel; Continuous Drain Current Id:-160mA; Drain Source Voltage Vds:-40V; On Resistance Rds(on):6ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-2V; Power RoHS Compliant: Yes

D-MOSFET, P-CH, -0.16A, -40V, TO-236AB-3; Transistor Polarity:P Channel; Continuous Drain Current Id:-160mA; Drain Source Voltage Vds:-40V; On Resistance Rds(on):6ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-2V; Power RoHS Compliant: Yes

Supplier's Site Datasheet
MOSFET P-CH 40V 0.16A SOT23-3 - 536-TP2104K1-G - Utmel Electronic Limited
Hong Kong, China
MOSFET P-CH 40V 0.16A SOT23-3
536-TP2104K1-G
MOSFET P-CH 40V 0.16A SOT23-3 536-TP2104K1-G
MOSFET P-CH 40V 0.16A SOT23-3

MOSFET P-CH 40V 0.16A SOT23-3

Supplier's Site
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - TP2104K1-G - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
TP2104K1-G
Discrete Semiconductor Products - Transistors - FETs, MOSFETs TP2104K1-G
MOSFET P-CH 40V 160MA TO236AB

MOSFET P-CH 40V 160MA TO236AB

Supplier's Site

Technical Specifications

  RS Components, Ltd. ODG (Origin Data Global) Win Source Electronics DigiKey Newark, An Avnet Company Utmel Electronic Limited Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 2648930P TP2104K1-G 1110973-TP2104K1-G TP2104K1-GTR-ND 55AC4222 536-TP2104K1-G TP2104K1-G
Product Name MOSFETs Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - TP2104K1-G Single FETs, MOSFETs D-Mosfet, P-Ch, -0.16A, -40V, To-236Ab-3; Transistor Polarity Microchip MOSFET P-CH 40V 0.16A SOT23-3 Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity P-Channel P-Channel; P-Channel P-Channel; P-Channel P-Channel
MOSFET Operating Mode Enhancement Enhancement; ENHANCEMENT MODE
Package Type SOT23; SOT-23 SOT23; TO-236-3, SC-59, SOT-23-3 SOT3; SOT23; TO-236AB (SOT23) SOT23; TO-236-3, SC-59, SOT-23-3 TO-3 SOT23; TO-236-3, SC-59, SOT-23-3
Transistor Technology / Material MOSFET (Metal Oxide) SILICON
V(BR)DSS 40 volts 40 volts -40 volts
Unlock Full Specs
to access all available technical data