Microchip Technology, Inc. Single FETs, MOSFETs TP0620N3-G

Description
P-Channel 200V 175mA (Tj) 1W (Ta) Through Hole TO-92-3
Request a Quote Datasheet
Description
P-Channel 200V 175mA (Tj) 1W (Ta) Through Hole TO-92-3
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - TP0620N3-G-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
TP0620N3-G-ND
Single FETs, MOSFETs TP0620N3-G-ND
P-Channel 200V 175mA (Tj) 1W (Ta) Through Hole TO-92-3

P-Channel 200V 175mA (Tj) 1W (Ta) Through Hole TO-92-3

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - TP0620N3-G - 1110968-TP0620N3-G - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - TP0620N3-G
1110968-TP0620N3-G
TRANSISTORS - Transistors - FETs, MOSFETs - RF - TP0620N3-G 1110968-TP0620N3-G
Manufacturer: Microchip Technology Win Source Part Number: 1110968-TP0620N3-G Packaging: Bulk Mounting: Through Hole Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 1W (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-92-3 Dimension: TO-226-3, TO-92-3 (TO-226AA) Drain-Source Breakdown Voltage: 200V Continuous Drain Current at 25°C: 175mA (Tj) Gate-Source Threshold Voltage: 2.4V @ 1mA Max Input Capacitance: 150pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 12 Ohm @ 200mA, 10V Popularity: Medium Fake Threat In the Open Market: 59 pct. Supply and Demand Status: Balance

Manufacturer: Microchip Technology
Win Source Part Number: 1110968-TP0620N3-G
Packaging: Bulk
Mounting: Through Hole
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 1W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-92-3
Dimension: TO-226-3, TO-92-3 (TO-226AA)
Drain-Source Breakdown Voltage: 200V
Continuous Drain Current at 25°C: 175mA (Tj)
Gate-Source Threshold Voltage: 2.4V @ 1mA
Max Input Capacitance: 150pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 12 Ohm @ 200mA, 10V
Popularity: Medium
Fake Threat In the Open Market: 59 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Corby, Northants, United Kingdom
MOSFETs
2648926
MOSFETs 2648926
MOSFET, P-CHANNEL ENHANCEMENT-MODE, -200

MOSFET, P-CHANNEL ENHANCEMENT-MODE, -200

Supplier's Site
Corby, Northants, United Kingdom
MOSFETs
2648927
MOSFETs 2648927
MOSFET, P-CHANNEL ENHANCEMENT-MODE, -200

MOSFET, P-CHANNEL ENHANCEMENT-MODE, -200

Supplier's Site
Corby, Northants, United Kingdom
MOSFETs
2648927P
MOSFETs 2648927P
MOSFET, P-CHANNEL ENHANCEMENT-MODE, -200

MOSFET, P-CHANNEL ENHANCEMENT-MODE, -200

Supplier's Site
Single FETs, MOSFETs - TP0620N3-G - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
TP0620N3-G
Single FETs, MOSFETs TP0620N3-G
MOSFET P-CH 200V 175MA TO92-3

MOSFET P-CH 200V 175MA TO92-3

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - TP0620N3-G - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
TP0620N3-G
Discrete Semiconductor Products - Transistors - FETs, MOSFETs TP0620N3-G
MOSFET P-CH 200V 175MA TO92-3

MOSFET P-CH 200V 175MA TO92-3

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics RS Components, Ltd. RS Components, Ltd. ODG (Origin Data Global) Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number TP0620N3-G-ND 1110968-TP0620N3-G 2648926 2648927P TP0620N3-G TP0620N3-G
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - TP0620N3-G MOSFETs MOSFETs Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity P-Channel P-Channel; P-Channel P-Channel P-Channel P-Channel; P-Channel
Package Type TO-92; TO-226-3, TO-92-3 (TO-226AA) TO-92; SOT3; TO-92-3 TO-92; TO-92 TO-92; TO-226-3, TO-92-3 (TO-226AA) TO-92; TO-226-3, TO-92-3 (TO-226AA)
V(BR)DSS 200 volts 200 volts 200 volts
PD 1000 milliwatts 1000 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
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