Microchip Technology, Inc. Single FETs, MOSFETs TP0620N3-G

MOSFET P-CH 200V 175MA TO92-3

MOSFET, P-CHANNEL ENHANCEMENT-MODE, -200

MOSFET, P-CHANNEL ENHANCEMENT-MODE, -200

MOSFET, P-CHANNEL ENHANCEMENT-MODE, -200

P-Channel 200V 175mA (Tj) 1W (Ta) Through Hole TO-92-3

MOSFET P-CH 200V 175MA TO92-3 Product overview: TP0620N3-G from Microchip Technology is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 200V, 175MA. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 200V, 175MA, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-TP0620N3-G can be used for catalog matching and distributor lookup.

Manufacturer: Microchip Technology
Win Source Part Number: 1110968-TP0620N3-G
Packaging: Bulk
Mounting: Through Hole
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 1W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-92-3
Dimension: TO-226-3, TO-92-3 (TO-226AA)
Drain-Source Breakdown Voltage: 200V
Continuous Drain Current at 25°C: 175mA (Tj)
Gate-Source Threshold Voltage: 2.4V @ 1mA
Max Input Capacitance: 150pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 12 Ohm @ 200mA, 10V
Popularity: Medium
Fake Threat In the Open Market: 59 pct.
Supply and Demand Status: Balance