Microchip Technology, Inc. TRANSISTORS - Transistors - FETs, MOSFETs - RF - TP0610T-G TP0610T-G

Description
Manufacturer: Microchip Technology Win Source Part Number: 121969-TP0610T-G Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 360mW (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-236AB (SOT23) Dimension: TO-236-3, SC-59, SOT-23-3 Drain-Source Breakdown Voltage: 60V Continuous Drain Current at 25°C: 120mA (Tj) Gate-Source Threshold Voltage: 2.4V @ 1mA Max Input Capacitance: 60pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 10 Ohm @ 200mA, 10V Alternative Parts (Cross-Reference): NDS0610; TP0610T; SP 0610T; Popularity: Medium Fake Threat In the Open Market: 71 pct. Supply and Demand Status: Balance
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - TP0610T-G - 121969-TP0610T-G - Win Source Electronics
    Win Source Electronics
  • Single FETs, MOSFETs - TP0610T-GCT-ND - DigiKey
    DigiKey
  • Single FETs, MOSFETs - TP0610T-GTR-ND - DigiKey
    DigiKey
  • Single FETs, MOSFETs - TP0610T-GDKR-ND - DigiKey
    DigiKey
  • D-Mosfet, P-Ch, -0.12A, -60V, To-236Ab-3; Transistor Polarity Microchip - 55AC4221 - Newark, An Avnet Company
    Newark, An Avnet Company
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - TP0610T-G - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
Request a Quote Datasheet
Description
Manufacturer: Microchip Technology Win Source Part Number: 121969-TP0610T-G Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 360mW (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-236AB (SOT23) Dimension: TO-236-3, SC-59, SOT-23-3 Drain-Source Breakdown Voltage: 60V Continuous Drain Current at 25°C: 120mA (Tj) Gate-Source Threshold Voltage: 2.4V @ 1mA Max Input Capacitance: 60pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 10 Ohm @ 200mA, 10V Alternative Parts (Cross-Reference): NDS0610; TP0610T; SP 0610T; Popularity: Medium Fake Threat In the Open Market: 71 pct. Supply and Demand Status: Balance
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - TP0610T-G - 121969-TP0610T-G - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - TP0610T-G
121969-TP0610T-G
TRANSISTORS - Transistors - FETs, MOSFETs - RF - TP0610T-G 121969-TP0610T-G
Manufacturer: Microchip Technology Win Source Part Number: 121969-TP0610T-G Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 360mW (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-236AB (SOT23) Dimension: TO-236-3, SC-59, SOT-23-3 Drain-Source Breakdown Voltage: 60V Continuous Drain Current at 25°C: 120mA (Tj) Gate-Source Threshold Voltage: 2.4V @ 1mA Max Input Capacitance: 60pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 10 Ohm @ 200mA, 10V Alternative Parts (Cross-Reference): NDS0610; TP0610T; SP 0610T; Popularity: Medium Fake Threat In the Open Market: 71 pct. Supply and Demand Status: Balance

Manufacturer: Microchip Technology
Win Source Part Number: 121969-TP0610T-G
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 360mW (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-236AB (SOT23)
Dimension: TO-236-3, SC-59, SOT-23-3
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 120mA (Tj)
Gate-Source Threshold Voltage: 2.4V @ 1mA
Max Input Capacitance: 60pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 10 Ohm @ 200mA, 10V
Alternative Parts (Cross-Reference): NDS0610; TP0610T; SP 0610T;
Popularity: Medium
Fake Threat In the Open Market: 71 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Single FETs, MOSFETs - TP0610T-GCT-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
TP0610T-GCT-ND
Single FETs, MOSFETs TP0610T-GCT-ND
P-Channel 60V 120mA (Tj) 360mW (Ta) Surface Mount TO-236AB (SOT23)

P-Channel 60V 120mA (Tj) 360mW (Ta) Surface Mount TO-236AB (SOT23)

Buy Now Datasheet
Single FETs, MOSFETs - TP0610T-GTR-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
TP0610T-GTR-ND
Single FETs, MOSFETs TP0610T-GTR-ND
P-Channel 60V 120mA (Tj) 360mW (Ta) Surface Mount TO-236AB (SOT23)

P-Channel 60V 120mA (Tj) 360mW (Ta) Surface Mount TO-236AB (SOT23)

Buy Now Datasheet
Single FETs, MOSFETs - TP0610T-GDKR-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
TP0610T-GDKR-ND
Single FETs, MOSFETs TP0610T-GDKR-ND
P-Channel 60V 120mA (Tj) 360mW (Ta) Surface Mount TO-236AB (SOT23)

P-Channel 60V 120mA (Tj) 360mW (Ta) Surface Mount TO-236AB (SOT23)

Buy Now Datasheet
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
MOSFET
TP0610T-G
MOSFET TP0610T-G
MOSFET -60V 100hm

MOSFET -60V 100hm

Buy Now Datasheet
D-Mosfet, P-Ch, -0.12A, -60V, To-236Ab-3; Transistor Polarity Microchip - 55AC4221 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
D-Mosfet, P-Ch, -0.12A, -60V, To-236Ab-3; Transistor Polarity Microchip
55AC4221
D-Mosfet, P-Ch, -0.12A, -60V, To-236Ab-3; Transistor Polarity Microchip 55AC4221
D-MOSFET, P-CH, -0.12A, -60V, TO-236AB-3; Transistor Polarity:P Channel; Continuous Drain Current Id:-120mA; Drain Source Voltage Vds:-60V; On Resistance Rds(on):10ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-2.4V; RoHS Compliant: Yes

D-MOSFET, P-CH, -0.12A, -60V, TO-236AB-3; Transistor Polarity:P Channel; Continuous Drain Current Id:-120mA; Drain Source Voltage Vds:-60V; On Resistance Rds(on):10ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-2.4V; RoHS Compliant: Yes

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - TP0610T-G - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
TP0610T-G
Discrete Semiconductor Products - Transistors - FETs, MOSFETs TP0610T-G
MOSFET P-CH 60V 120MA TO236AB

MOSFET P-CH 60V 120MA TO236AB

Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey VAST STOCK CO., LIMITED Newark, An Avnet Company Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 121969-TP0610T-G TP0610T-GCT-ND TP0610T-G 55AC4221 TP0610T-G
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - TP0610T-G Single FETs, MOSFETs MOSFET D-Mosfet, P-Ch, -0.12A, -60V, To-236Ab-3; Transistor Polarity Microchip Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity P-Channel; P-Channel P-Channel
V(BR)DSS 60 volts
PD 360 milliwatts
TJ -55 to 150 C (-67 to 302 F)
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