Manufacturer: Microchip Technology
Win Source Part Number: 1110967-TP0606N3-G
Packaging: Bulk
Mounting: Through Hole
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 1W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-92-3
Dimension: TO-226-3, TO-92-3 (TO-226AA)
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 320mA (Tj)
Gate-Source Threshold Voltage: 2.4V @ 1mA
Max Input Capacitance: 150pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 3.5 Ohm @ 750mA, 10V
Popularity: Medium
Fake Threat In the Open Market: 72 pct.
Supply and Demand Status: Balance
MOSFET, P-CHANNEL ENHANCEMENT-MODE, -60V
MOSFET, P-CHANNEL ENHANCEMENT-MODE, -60V
MOSFET, P-CHANNEL ENHANCEMENT-MODE, -60V
P-Channel 60V 320mA (Tj) 1W (Tc) Through Hole TO-92-3
MOSFET P-CH 60V 320MA TO92-3
MOSFET, P-CH, 60V, 0.32A, 150DEG C, 1W; Channel Type:P Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:320mA; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:2.4V RoHS Compliant: Yes
MOSFET, P-CH, -0.32A, -60V, TO-92-3; Transistor Polarity:P Channel; Continuous Drain Current Id:-320mA; Drain Source Voltage Vds:-60V; On Resistance Rds(on):3ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-2.4V; Power RoHS Compliant: Yes
| Win Source Electronics | RS Components, Ltd. | DigiKey | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | Newark, An Avnet Company | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 1110967-TP0606N3-G | 1779694 | TP0606N3-G-ND | TP0606N3-G | TP0606N3-G | 53Y4265 | 44AC3371 |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - TP0606N3-G | MOSFETs | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET | Mosfet, P-Ch, 60V, 0.32A, 150Deg C, 1W; Channel Type Microchip | Mosfet, P-Ch, -0.32A, -60V, To-92-3; Transistor Polarity Microchip |
| Polarity | P-Channel; P-Channel | P-Channel | P-Channel | ||||
| V(BR)DSS | 60 volts | ||||||
| PD | 1000 milliwatts | ||||||
| TJ | -55 to 150 C (-67 to 302 F) | ||||||
| Package Type | TO-92; SOT3; TO-92-3 | TO-92; TO-226-3, TO-92-3 (TO-226AA) | TO-92; TO-226-3, TO-92-3 (TO-226AA) | TO-3 | TO-3; TO-92 |
