Microchip Technology, Inc. Single FETs, MOSFETs TP0606N3-G

Description
P-Channel 60V 320mA (Tj) 1W (Tc) Through Hole TO-92-3
Request a Quote Datasheet
Description
P-Channel 60V 320mA (Tj) 1W (Tc) Through Hole TO-92-3
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - TP0606N3-G-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
TP0606N3-G-ND
Single FETs, MOSFETs TP0606N3-G-ND
P-Channel 60V 320mA (Tj) 1W (Tc) Through Hole TO-92-3

P-Channel 60V 320mA (Tj) 1W (Tc) Through Hole TO-92-3

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - TP0606N3-G - 1110967-TP0606N3-G - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - TP0606N3-G
1110967-TP0606N3-G
TRANSISTORS - Transistors - FETs, MOSFETs - RF - TP0606N3-G 1110967-TP0606N3-G
Manufacturer: Microchip Technology Win Source Part Number: 1110967-TP0606N3-G Packaging: Bulk Mounting: Through Hole Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 1W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-92-3 Dimension: TO-226-3, TO-92-3 (TO-226AA) Drain-Source Breakdown Voltage: 60V Continuous Drain Current at 25°C: 320mA (Tj) Gate-Source Threshold Voltage: 2.4V @ 1mA Max Input Capacitance: 150pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 3.5 Ohm @ 750mA, 10V Popularity: Medium Fake Threat In the Open Market: 72 pct. Supply and Demand Status: Balance

Manufacturer: Microchip Technology
Win Source Part Number: 1110967-TP0606N3-G
Packaging: Bulk
Mounting: Through Hole
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 1W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-92-3
Dimension: TO-226-3, TO-92-3 (TO-226AA)
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 320mA (Tj)
Gate-Source Threshold Voltage: 2.4V @ 1mA
Max Input Capacitance: 150pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 3.5 Ohm @ 750mA, 10V
Popularity: Medium
Fake Threat In the Open Market: 72 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Corby, Northants, United Kingdom
MOSFETs
1779694
MOSFETs 1779694
MOSFET, P-CHANNEL ENHANCEMENT-MODE, -60V

MOSFET, P-CHANNEL ENHANCEMENT-MODE, -60V

Supplier's Site
Corby, Northants, United Kingdom
MOSFETs
1779861P
MOSFETs 1779861P
MOSFET, P-CHANNEL ENHANCEMENT-MODE, -60V

MOSFET, P-CHANNEL ENHANCEMENT-MODE, -60V

Supplier's Site
Corby, Northants, United Kingdom
MOSFETs
1779861
MOSFETs 1779861
MOSFET, P-CHANNEL ENHANCEMENT-MODE, -60V

MOSFET, P-CHANNEL ENHANCEMENT-MODE, -60V

Supplier's Site
Sheung Wan, Hong Kong
MOSFET 60V 3.5Ohm

MOSFET 60V 3.5Ohm

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - TP0606N3-G - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
TP0606N3-G
Discrete Semiconductor Products - Transistors - FETs, MOSFETs TP0606N3-G
MOSFET P-CH 60V 320MA TO92-3

MOSFET P-CH 60V 320MA TO92-3

Supplier's Site
Mosfet, P-Ch, 60V, 0.32A, 150Deg C, 1W; Channel Type Microchip - 53Y4265 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, P-Ch, 60V, 0.32A, 150Deg C, 1W; Channel Type Microchip
53Y4265
Mosfet, P-Ch, 60V, 0.32A, 150Deg C, 1W; Channel Type Microchip 53Y4265
MOSFET, P-CH, 60V, 0.32A, 150DEG C, 1W; Channel Type:P Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:320mA; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:2.4V RoHS Compliant: Yes

MOSFET, P-CH, 60V, 0.32A, 150DEG C, 1W; Channel Type:P Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:320mA; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:2.4V RoHS Compliant: Yes

Supplier's Site Datasheet
Mosfet, P-Ch, -0.32A, -60V, To-92-3; Transistor Polarity Microchip - 44AC3371 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, P-Ch, -0.32A, -60V, To-92-3; Transistor Polarity Microchip
44AC3371
Mosfet, P-Ch, -0.32A, -60V, To-92-3; Transistor Polarity Microchip 44AC3371
MOSFET, P-CH, -0.32A, -60V, TO-92-3; Transistor Polarity:P Channel; Continuous Drain Current Id:-320mA; Drain Source Voltage Vds:-60V; On Resistance Rds(on):3ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-2.4V; Power RoHS Compliant: Yes

MOSFET, P-CH, -0.32A, -60V, TO-92-3; Transistor Polarity:P Channel; Continuous Drain Current Id:-320mA; Drain Source Voltage Vds:-60V; On Resistance Rds(on):3ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-2.4V; Power RoHS Compliant: Yes

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics RS Components, Ltd. VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited Newark, An Avnet Company Newark, An Avnet Company
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number TP0606N3-G-ND 1110967-TP0606N3-G 1779694 TP0606N3-G TP0606N3-G 53Y4265 44AC3371
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - TP0606N3-G MOSFETs MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs Mosfet, P-Ch, 60V, 0.32A, 150Deg C, 1W; Channel Type Microchip Mosfet, P-Ch, -0.32A, -60V, To-92-3; Transistor Polarity Microchip
Polarity P-Channel P-Channel; P-Channel P-Channel
Package Type TO-92; TO-226-3, TO-92-3 (TO-226AA) TO-92; SOT3; TO-92-3 TO-92; TO-226-3, TO-92-3 (TO-226AA) TO-3 TO-3; TO-92
V(BR)DSS 60 volts
PD 1000 milliwatts
TJ -55 to 150 C (-67 to 302 F)
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