Manufacturer: Microchip Technology
Win Source Part Number: 048060-TN2640LG-G
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 1.3W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SOIC
Dimension: 8-SOIC (0.154", 3.90mm Width)
Drain-Source Breakdown Voltage: 400V
Continuous Drain Current at 25°C: 260mA (Tj)
Gate-Source Threshold Voltage: 2V @ 2mA
Max Input Capacitance: 225pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 5 Ohm @ 500mA, 10V
Popularity: Medium
Fake Threat In the Open Market: 66 pct.
Supply and Demand Status: Balance
MOSFET N-CH 400V 260MA 8SOIC
MOSFET N-CH 400V 260MA 8SOIC
N-Channel 400V 260mA (Tj) 1.3W (Ta) Surface Mount 8-SOIC
MOSFET N-CH 400V 260MA 8SOIC
MOSFET N-CH 400V 260MA 8SOIC
| Win Source Electronics | ODG (Origin Data Global) | DigiKey | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 048060-TN2640LG-G | TN2640LG-G | 150-TN2640LG-GDKR-ND | TN2640LG-G | TN2640LG-G |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - TN2640LG-G | Single FETs, MOSFETs | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET |
| Polarity | N-Channel; N-Channel | N-Channel; N-Channel | N-Channel | ||
| V(BR)DSS | 400 volts | 400 volts | |||
| PD | 1300 milliwatts | 1300 milliwatts | |||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) |
