Manufacturer: Microchip Technology
Win Source Part Number: 1271465-TN2106N3-G
Packaging: Bulk
Mounting Style: Through Hole
Technology: MOSFET
Transistor Polarity: N-Channel
Categories: Discrete Semiconductor Products
Supplier Device Package: TO-92-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Temperature Range - Operating: -55°C ~ 150°C
Manufacturer Homepage: www.supertex.com
Manufacturer Package: TO-226-3, TO-92-3 (TO-226AA)
Power Dissipation (Maximum): 740mW
Popularity: Medium
Fake Threat In the Open Market: 49 pct.
Supply and Demand Status: Balance
Manufacturer Pack Quantity: 1,000
MSL Level: 1 (Unlimited)
Vds - Drain-Source Breakdown Voltage: 60V
Id - Continuous Drain Current: 300mA
Rds On (Maximum) at Id, Vgs: 2.5Ohm at 500mA, 10V
Gate Source Voltage(th) (Maximum) at Id: 2V at 1mA
Gate Source Voltage (Maximum): ±20V
Input Capacitance (Ciss) (Maximum) at Vds: 50pF at 25V
N-Channel 60V 300mA (Tj) 740mW (Tc) Through Hole TO-92-3
MOSFET, N-CHANNEL ENHANCEMENT-MODE, 60V,
MOSFET, N-CHANNEL ENHANCEMENT-MODE, 60V,
MOSFET, N-CHANNEL ENHANCEMENT-MODE, 60V,
MOSFET N-CH 60V 300MA TO92-3
MOSFET N-CH 60V 300MA TO92-3
MOSFET, N-CH, 100V, 1.2A, TO-92; Channel Type:N Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:0.5A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:2.4V RoHS Compliant: Yes
MOSFET N-CH 60V 300MA TO92-3
| Win Source Electronics | DigiKey | RS Components, Ltd. | RS Components, Ltd. | ODG (Origin Data Global) | Utmel Electronic Limited | VAST STOCK CO., LIMITED | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 1271465-TN2106N3-G | TN2106N3-G-ND | 1779850 | 1779850P | TN2106N3-G | 536-TN2106N3-G | TN2106N3-G | 53Y4243 | TN2106N3-G |
| Product Name | FETs - Single - TN2106N3-G | Single FETs, MOSFETs | MOSFETs | MOSFETs | Single FETs, MOSFETs | MOSFET N-CH 60V 300MA TO92-3 | MOSFET | Mosfet, N-Ch, 100V, 1.2A, To-92; Channel Type Microchip | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel | N-Channel | N-Channel; N-Channel | ||||
| MOSFET Operating Mode | Enhancement | Enhancement | Enhancement | Enhancement; ENHANCEMENT MODE | |||||
| V(BR)DSS | 60 volts | 60 volts | 60 volts | ||||||
| PD | 740 milliwatts | 740 milliwatts | 740 milliwatts | ||||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) |
