Microchip Technology, Inc. TRANSISTORS - Transistors - FETs, MOSFETs - RF - TN0620N3-G TN0620N3-G

Description
Manufacturer: Microchip Technology Win Source Part Number: 1110794-TN0620N3-G Packaging: Bulk Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 1W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-92-3 Dimension: TO-226-3, TO-92-3 (TO-226AA) Drain-Source Breakdown Voltage: 200V Continuous Drain Current at 25°C: 250mA (Tj) Gate-Source Threshold Voltage: 1.6V @ 1mA Max Input Capacitance: 150pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 6 Ohm @ 500mA, 10V Popularity: Medium Fake Threat In the Open Market: 55 pct. Supply and Demand Status: Limited
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - TN0620N3-G - 1110794-TN0620N3-G - Win Source Electronics
    Win Source Electronics
  • Single FETs, MOSFETs - TN0620N3-G-ND - DigiKey
    DigiKey
  • Single FETs, MOSFETs - TN0620N3-G - ODG (Origin Data Global)
    ODG (Origin Data Global)
  • D-Mosfet, N-Ch, 0.25A, 200V, To-92-3; Transistor Polarity Microchip - 55AC3999 - Newark, An Avnet Company
    Newark, An Avnet Company
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - TN0620N3-G - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
Request a Quote Datasheet
Description
Manufacturer: Microchip Technology Win Source Part Number: 1110794-TN0620N3-G Packaging: Bulk Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 1W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-92-3 Dimension: TO-226-3, TO-92-3 (TO-226AA) Drain-Source Breakdown Voltage: 200V Continuous Drain Current at 25°C: 250mA (Tj) Gate-Source Threshold Voltage: 1.6V @ 1mA Max Input Capacitance: 150pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 6 Ohm @ 500mA, 10V Popularity: Medium Fake Threat In the Open Market: 55 pct. Supply and Demand Status: Limited
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - TN0620N3-G - 1110794-TN0620N3-G - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - TN0620N3-G
1110794-TN0620N3-G
TRANSISTORS - Transistors - FETs, MOSFETs - RF - TN0620N3-G 1110794-TN0620N3-G
Manufacturer: Microchip Technology Win Source Part Number: 1110794-TN0620N3-G Packaging: Bulk Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 1W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-92-3 Dimension: TO-226-3, TO-92-3 (TO-226AA) Drain-Source Breakdown Voltage: 200V Continuous Drain Current at 25°C: 250mA (Tj) Gate-Source Threshold Voltage: 1.6V @ 1mA Max Input Capacitance: 150pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 6 Ohm @ 500mA, 10V Popularity: Medium Fake Threat In the Open Market: 55 pct. Supply and Demand Status: Limited

Manufacturer: Microchip Technology
Win Source Part Number: 1110794-TN0620N3-G
Packaging: Bulk
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 1W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-92-3
Dimension: TO-226-3, TO-92-3 (TO-226AA)
Drain-Source Breakdown Voltage: 200V
Continuous Drain Current at 25°C: 250mA (Tj)
Gate-Source Threshold Voltage: 1.6V @ 1mA
Max Input Capacitance: 150pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 6 Ohm @ 500mA, 10V
Popularity: Medium
Fake Threat In the Open Market: 55 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Single FETs, MOSFETs - TN0620N3-G-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
TN0620N3-G-ND
Single FETs, MOSFETs TN0620N3-G-ND
N-Channel 200V 250mA (Tj) 1W (Tc) Through Hole TO-92-3

N-Channel 200V 250mA (Tj) 1W (Tc) Through Hole TO-92-3

Buy Now Datasheet
Single FETs, MOSFETs - TN0620N3-G - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
TN0620N3-G
Single FETs, MOSFETs TN0620N3-G
MOSFET N-CH 200V 250MA TO92-3

MOSFET N-CH 200V 250MA TO92-3

Supplier's Site Datasheet
D-Mosfet, N-Ch, 0.25A, 200V, To-92-3; Transistor Polarity Microchip - 55AC3999 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
D-Mosfet, N-Ch, 0.25A, 200V, To-92-3; Transistor Polarity Microchip
55AC3999
D-Mosfet, N-Ch, 0.25A, 200V, To-92-3; Transistor Polarity Microchip 55AC3999
D-MOSFET, N-CH, 0.25A, 200V, TO-92-3; Transistor Polarity:N Channel; Continuous Drain Current Id:250mA; Drain Source Voltage Vds:200V; On Resistance Rds(on):4ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.6V; Power RoHS Compliant: Yes

D-MOSFET, N-CH, 0.25A, 200V, TO-92-3; Transistor Polarity:N Channel; Continuous Drain Current Id:250mA; Drain Source Voltage Vds:200V; On Resistance Rds(on):4ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.6V; Power RoHS Compliant: Yes

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - TN0620N3-G - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
TN0620N3-G
Discrete Semiconductor Products - Transistors - FETs, MOSFETs TN0620N3-G
MOSFET N-CH 200V 250MA TO92-3

MOSFET N-CH 200V 250MA TO92-3

Supplier's Site
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
MOSFET
TN0620N3-G
MOSFET TN0620N3-G
MOSFET 200V 6Ohm

MOSFET 200V 6Ohm

Buy Now Datasheet

Technical Specifications

  Win Source Electronics DigiKey ODG (Origin Data Global) Newark, An Avnet Company Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 1110794-TN0620N3-G TN0620N3-G-ND TN0620N3-G 55AC3999 TN0620N3-G TN0620N3-G
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - TN0620N3-G Single FETs, MOSFETs Single FETs, MOSFETs D-Mosfet, N-Ch, 0.25A, 200V, To-92-3; Transistor Polarity Microchip Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET
Polarity N-Channel; N-Channel N-Channel N-Channel; N-Channel
V(BR)DSS 200 volts 200 volts
PD 1000 milliwatts 1000 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
Package Type TO-92; SOT3; TO-92-3 TO-92; TO-226-3, TO-92-3 (TO-226AA) TO-92; TO-226-3, TO-92-3 (TO-226AA) TO-3; TO-92 TO-92; TO-226-3, TO-92-3 (TO-226AA)
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