Microchip Technology, Inc. Single FETs, MOSFETs TN0620N3-G

Description
MOSFET N-CH 200V 250MA TO92-3
  • Single FETs, MOSFETs - TN0620N3-G - ODG (Origin Data Global)
    ODG (Origin Data Global)
  • Single FETs, MOSFETs - TN0620N3-G-ND - DigiKey
    DigiKey
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - TN0620N3-G - 1110794-TN0620N3-G - Win Source Electronics
    Win Source Electronics
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - TN0620N3-G - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
  • D-Mosfet, N-Ch, 0.25A, 200V, To-92-3; Transistor Polarity Microchip - 55AC3999 - Newark, An Avnet Company
    Newark, An Avnet Company
Request a Quote Datasheet
Description
MOSFET N-CH 200V 250MA TO92-3
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - TN0620N3-G - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
TN0620N3-G
Single FETs, MOSFETs TN0620N3-G
MOSFET N-CH 200V 250MA TO92-3

MOSFET N-CH 200V 250MA TO92-3

Supplier's Site Datasheet
Single FETs, MOSFETs - TN0620N3-G-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
TN0620N3-G-ND
Single FETs, MOSFETs TN0620N3-G-ND
N-Channel 200V 250mA (Tj) 1W (Tc) Through Hole TO-92-3

N-Channel 200V 250mA (Tj) 1W (Tc) Through Hole TO-92-3

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - TN0620N3-G - 1110794-TN0620N3-G - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - TN0620N3-G
1110794-TN0620N3-G
TRANSISTORS - Transistors - FETs, MOSFETs - RF - TN0620N3-G 1110794-TN0620N3-G
Manufacturer: Microchip Technology Win Source Part Number: 1110794-TN0620N3-G Packaging: Bulk Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 1W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-92-3 Dimension: TO-226-3, TO-92-3 (TO-226AA) Drain-Source Breakdown Voltage: 200V Continuous Drain Current at 25°C: 250mA (Tj) Gate-Source Threshold Voltage: 1.6V @ 1mA Max Input Capacitance: 150pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 6 Ohm @ 500mA, 10V Popularity: Medium Fake Threat In the Open Market: 55 pct. Supply and Demand Status: Limited

Manufacturer: Microchip Technology
Win Source Part Number: 1110794-TN0620N3-G
Packaging: Bulk
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 1W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-92-3
Dimension: TO-226-3, TO-92-3 (TO-226AA)
Drain-Source Breakdown Voltage: 200V
Continuous Drain Current at 25°C: 250mA (Tj)
Gate-Source Threshold Voltage: 1.6V @ 1mA
Max Input Capacitance: 150pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 6 Ohm @ 500mA, 10V
Popularity: Medium
Fake Threat In the Open Market: 55 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - TN0620N3-G - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
TN0620N3-G
Discrete Semiconductor Products - Transistors - FETs, MOSFETs TN0620N3-G
MOSFET N-CH 200V 250MA TO92-3

MOSFET N-CH 200V 250MA TO92-3

Supplier's Site
D-Mosfet, N-Ch, 0.25A, 200V, To-92-3; Transistor Polarity Microchip - 55AC3999 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
D-Mosfet, N-Ch, 0.25A, 200V, To-92-3; Transistor Polarity Microchip
55AC3999
D-Mosfet, N-Ch, 0.25A, 200V, To-92-3; Transistor Polarity Microchip 55AC3999
D-MOSFET, N-CH, 0.25A, 200V, TO-92-3; Transistor Polarity:N Channel; Continuous Drain Current Id:250mA; Drain Source Voltage Vds:200V; On Resistance Rds(on):4ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.6V; Power RoHS Compliant: Yes

D-MOSFET, N-CH, 0.25A, 200V, TO-92-3; Transistor Polarity:N Channel; Continuous Drain Current Id:250mA; Drain Source Voltage Vds:200V; On Resistance Rds(on):4ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.6V; Power RoHS Compliant: Yes

Supplier's Site Datasheet
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
MOSFET
TN0620N3-G
MOSFET TN0620N3-G
MOSFET 200V 6Ohm

MOSFET 200V 6Ohm

Buy Now Datasheet

Technical Specifications

  ODG (Origin Data Global) DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited Newark, An Avnet Company VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number TN0620N3-G TN0620N3-G-ND 1110794-TN0620N3-G TN0620N3-G 55AC3999 TN0620N3-G
Product Name Single FETs, MOSFETs Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - TN0620N3-G Discrete Semiconductor Products - Transistors - FETs, MOSFETs D-Mosfet, N-Ch, 0.25A, 200V, To-92-3; Transistor Polarity Microchip MOSFET
Polarity N-Channel; N-Channel N-Channel N-Channel; N-Channel
Transistor Technology / Material MOSFET (Metal Oxide)
V(BR)DSS 200 volts 200 volts
IDSS 250 milliamps 250 milliamps
PD 1000 milliwatts 1000 milliwatts
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