Microchip Technology, Inc. Single FETs, MOSFETs TN0620N3-G

Description
MOSFET N-CH 200V 250MA TO92-3
  • Single FETs, MOSFETs - TN0620N3-G - ODG (Origin Data Global)
    ODG (Origin Data Global)
  • Single FETs, MOSFETs - TN0620N3-G-ND - DigiKey
    DigiKey
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - TN0620N3-G - 1110794-TN0620N3-G - Win Source Electronics
    Win Source Electronics
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - TN0620N3-G - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
  • D-Mosfet, N-Ch, 0.25A, 200V, To-92-3; Transistor Polarity Microchip - 55AC3999 - Newark, An Avnet Company
    Newark, An Avnet Company
Request a Quote Datasheet
Description
MOSFET N-CH 200V 250MA TO92-3
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - TN0620N3-G - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
TN0620N3-G
Single FETs, MOSFETs TN0620N3-G
MOSFET N-CH 200V 250MA TO92-3

MOSFET N-CH 200V 250MA TO92-3

Supplier's Site Datasheet
Single FETs, MOSFETs - TN0620N3-G-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
TN0620N3-G-ND
Single FETs, MOSFETs TN0620N3-G-ND
N-Channel 200V 250mA (Tj) 1W (Tc) Through Hole TO-92-3

N-Channel 200V 250mA (Tj) 1W (Tc) Through Hole TO-92-3

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - TN0620N3-G - 1110794-TN0620N3-G - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - TN0620N3-G
1110794-TN0620N3-G
TRANSISTORS - Transistors - FETs, MOSFETs - RF - TN0620N3-G 1110794-TN0620N3-G
Manufacturer: Microchip Technology Win Source Part Number: 1110794-TN0620N3-G Packaging: Bulk Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 1W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-92-3 Dimension: TO-226-3, TO-92-3 (TO-226AA) Drain-Source Breakdown Voltage: 200V Continuous Drain Current at 25°C: 250mA (Tj) Gate-Source Threshold Voltage: 1.6V @ 1mA Max Input Capacitance: 150pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 6 Ohm @ 500mA, 10V Popularity: Medium Fake Threat In the Open Market: 55 pct. Supply and Demand Status: Limited

Manufacturer: Microchip Technology
Win Source Part Number: 1110794-TN0620N3-G
Packaging: Bulk
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 1W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-92-3
Dimension: TO-226-3, TO-92-3 (TO-226AA)
Drain-Source Breakdown Voltage: 200V
Continuous Drain Current at 25°C: 250mA (Tj)
Gate-Source Threshold Voltage: 1.6V @ 1mA
Max Input Capacitance: 150pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 6 Ohm @ 500mA, 10V
Popularity: Medium
Fake Threat In the Open Market: 55 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - TN0620N3-G - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
TN0620N3-G
Discrete Semiconductor Products - Transistors - FETs, MOSFETs TN0620N3-G
MOSFET N-CH 200V 250MA TO92-3

MOSFET N-CH 200V 250MA TO92-3

Supplier's Site
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
MOSFET
TN0620N3-G
MOSFET TN0620N3-G
MOSFET 200V 6Ohm

MOSFET 200V 6Ohm

Buy Now Datasheet
D-Mosfet, N-Ch, 0.25A, 200V, To-92-3; Transistor Polarity Microchip - 55AC3999 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
D-Mosfet, N-Ch, 0.25A, 200V, To-92-3; Transistor Polarity Microchip
55AC3999
D-Mosfet, N-Ch, 0.25A, 200V, To-92-3; Transistor Polarity Microchip 55AC3999
D-MOSFET, N-CH, 0.25A, 200V, TO-92-3; Transistor Polarity:N Channel; Continuous Drain Current Id:250mA; Drain Source Voltage Vds:200V; On Resistance Rds(on):4ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.6V; Power RoHS Compliant: Yes

D-MOSFET, N-CH, 0.25A, 200V, TO-92-3; Transistor Polarity:N Channel; Continuous Drain Current Id:250mA; Drain Source Voltage Vds:200V; On Resistance Rds(on):4ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.6V; Power RoHS Compliant: Yes

Supplier's Site Datasheet

Technical Specifications

  ODG (Origin Data Global) DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED Newark, An Avnet Company
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number TN0620N3-G TN0620N3-G-ND 1110794-TN0620N3-G TN0620N3-G TN0620N3-G 55AC3999
Product Name Single FETs, MOSFETs Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - TN0620N3-G Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET D-Mosfet, N-Ch, 0.25A, 200V, To-92-3; Transistor Polarity Microchip
Polarity N-Channel; N-Channel N-Channel N-Channel; N-Channel
Transistor Technology / Material MOSFET (Metal Oxide)
V(BR)DSS 200 volts 200 volts
IDSS 250 milliamps 250 milliamps
PD 1000 milliwatts 1000 milliwatts
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