Microchip Technology, Inc. Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs TN0620N3-G-P014

Description
Win Source Part Number: 1351295-TN0620N3-G-P 014 Category: Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs Package: Tape & Box (TB) Standard Package: 2,000 Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 200 V Power Dissipation (Max): 1W (Tc) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) Supplier Device Package: TO-92-3 Vgs (Max): ±20V Temperature Range - Operating: -55°C ~ 150°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 57 pct. MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Mfr: Microchip Technology Base Product Number: TN0620 Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Current - Continuous Drain (Id) @ 25°C: 250mA (Tj) Rds On (Max) @ Id, Vgs: 6Ohm @ 500mA, 10V Vgs(th) (Max) @ Id: 1.6V @ 1mA Input Capacitance (Ciss) (Max) @ Vds: 150 pF @ 25 V
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Description
Win Source Part Number: 1351295-TN0620N3-G-P 014 Category: Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs Package: Tape & Box (TB) Standard Package: 2,000 Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 200 V Power Dissipation (Max): 1W (Tc) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) Supplier Device Package: TO-92-3 Vgs (Max): ±20V Temperature Range - Operating: -55°C ~ 150°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 57 pct. MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Mfr: Microchip Technology Base Product Number: TN0620 Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Current - Continuous Drain (Id) @ 25°C: 250mA (Tj) Rds On (Max) @ Id, Vgs: 6Ohm @ 500mA, 10V Vgs(th) (Max) @ Id: 1.6V @ 1mA Input Capacitance (Ciss) (Max) @ Vds: 150 pF @ 25 V
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Suppliers

Company
Product
Description
Supplier Links
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs - 1351295-TN0620N3-G-P014 - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
1351295-TN0620N3-G-P014
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs 1351295-TN0620N3-G-P014
Win Source Part Number: 1351295-TN0620N3-G-P 014 Category: Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs Package: Tape & Box (TB) Standard Package: 2,000 Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 200 V Power Dissipation (Max): 1W (Tc) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) Supplier Device Package: TO-92-3 Vgs (Max): ±20V Temperature Range - Operating: -55°C ~ 150°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 57 pct. MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Mfr: Microchip Technology Base Product Number: TN0620 Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Current - Continuous Drain (Id) @ 25°C: 250mA (Tj) Rds On (Max) @ Id, Vgs: 6Ohm @ 500mA, 10V Vgs(th) (Max) @ Id: 1.6V @ 1mA Input Capacitance (Ciss) (Max) @ Vds: 150 pF @ 25 V

Win Source Part Number: 1351295-TN0620N3-G-P014
Category: Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Package: Tape & Box (TB)
Standard Package: 2,000
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 200 V
Power Dissipation (Max): 1W (Tc)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package: TO-92-3
Vgs (Max): ±20V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 57 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: Microchip Technology
Base Product Number: TN0620
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Current - Continuous Drain (Id) @ 25°C: 250mA (Tj)
Rds On (Max) @ Id, Vgs: 6Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id: 1.6V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds: 150 pF @ 25 V

Buy Now Datasheet
Single FETs, MOSFETs - TN0620N3-G-P014-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
TN0620N3-G-P014-ND
Single FETs, MOSFETs TN0620N3-G-P014-ND
N-Channel 200V 250mA (Tj) 1W (Tc) Through Hole TO-92-3

N-Channel 200V 250mA (Tj) 1W (Tc) Through Hole TO-92-3

Buy Now Datasheet
Sheung Wan, Hong Kong
MOSFET N-CH Enhancmnt Mode MOSFET

MOSFET N-CH Enhancmnt Mode MOSFET

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Discrete Semiconductor Products - Transistors - FETs, MOSFETs - TN0620N3-G-P014 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
TN0620N3-G-P014
Discrete Semiconductor Products - Transistors - FETs, MOSFETs TN0620N3-G-P014
MOSFET N-CH 200V 250MA TO92-3

MOSFET N-CH 200V 250MA TO92-3

Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 1351295-TN0620N3-G-P014 TN0620N3-G-P014-ND TN0620N3-G-P014 TN0620N3-G-P014
Product Name Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs Single FETs, MOSFETs MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel
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