Microchip Technology, Inc. Single FETs, MOSFETs TN0610N3-G

Description
N-Channel 100V 500mA (Tj) 1W (Tc) Through Hole TO-92-3
Request a Quote Datasheet
Description
N-Channel 100V 500mA (Tj) 1W (Tc) Through Hole TO-92-3
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - TN0610N3-G-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
TN0610N3-G-ND
Single FETs, MOSFETs TN0610N3-G-ND
N-Channel 100V 500mA (Tj) 1W (Tc) Through Hole TO-92-3

N-Channel 100V 500mA (Tj) 1W (Tc) Through Hole TO-92-3

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - TN0610N3-G - 1110793-TN0610N3-G - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - TN0610N3-G
1110793-TN0610N3-G
TRANSISTORS - Transistors - FETs, MOSFETs - RF - TN0610N3-G 1110793-TN0610N3-G
Manufacturer: Microchip Technology Win Source Part Number: 1110793-TN0610N3-G Packaging: Bulk Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 1W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 3V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-92-3 Dimension: TO-226-3, TO-92-3 (TO-226AA) Drain-Source Breakdown Voltage: 100V Continuous Drain Current at 25°C: 500mA (Tj) Gate-Source Threshold Voltage: 2V @ 1mA Max Input Capacitance: 150pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 1.5 Ohm @ 750mA, 10V Popularity: Medium Fake Threat In the Open Market: 62 pct. Supply and Demand Status: Balance

Manufacturer: Microchip Technology
Win Source Part Number: 1110793-TN0610N3-G
Packaging: Bulk
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 1W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 3V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-92-3
Dimension: TO-226-3, TO-92-3 (TO-226AA)
Drain-Source Breakdown Voltage: 100V
Continuous Drain Current at 25°C: 500mA (Tj)
Gate-Source Threshold Voltage: 2V @ 1mA
Max Input Capacitance: 150pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 1.5 Ohm @ 750mA, 10V
Popularity: Medium
Fake Threat In the Open Market: 62 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
MOSFETs - 2648912 - RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
2648912
MOSFETs 2648912
MOSFET, N-CHANNEL ENHANCEMENT-MODE, 100V

MOSFET, N-CHANNEL ENHANCEMENT-MODE, 100V

Supplier's Site
MOSFETs - 2648911 - RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
2648911
MOSFETs 2648911
MOSFET, N-CHANNEL ENHANCEMENT-MODE, 100V

MOSFET, N-CHANNEL ENHANCEMENT-MODE, 100V

Supplier's Site
MOSFETs - 2648912P - RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
2648912P
MOSFETs 2648912P
MOSFET, N-CHANNEL ENHANCEMENT-MODE, 100V

MOSFET, N-CHANNEL ENHANCEMENT-MODE, 100V

Supplier's Site
Sheung Wan, Hong Kong
MOSFET 100V 1.5Ohm

MOSFET 100V 1.5Ohm

Buy Now
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - TN0610N3-G - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
TN0610N3-G
Discrete Semiconductor Products - Transistors - FETs, MOSFETs TN0610N3-G
MOSFET N-CH 100V 500MA TO92-3

MOSFET N-CH 100V 500MA TO92-3

Supplier's Site
MOSFET N-CH 100V 500MA TO92-3 - 536-TN0610N3-G - Utmel Electronic Limited
Hong Kong, China
MOSFET N-CH 100V 500MA TO92-3
536-TN0610N3-G
MOSFET N-CH 100V 500MA TO92-3 536-TN0610N3-G
MOSFET N-CH 100V 500MA TO92-3

MOSFET N-CH 100V 500MA TO92-3

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics RS Components, Ltd. VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited Utmel Electronic Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number TN0610N3-G-ND 1110793-TN0610N3-G 2648912 TN0610N3-G TN0610N3-G 536-TN0610N3-G
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - TN0610N3-G MOSFETs MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET N-CH 100V 500MA TO92-3
Polarity N-Channel N-Channel; N-Channel N-Channel
Package Type TO-92; TO-226-3, TO-92-3 (TO-226AA) TO-92; SOT3; TO-92-3 TO-92; TO-92 TO-92; TO-226-3, TO-92-3 (TO-226AA)
V(BR)DSS 100 volts 100 volts
PD 1000 milliwatts 1000 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
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