Microchip Technology, Inc. TRANSISTORS - Transistors - FETs, MOSFETs - RF - TN0604N3-G TN0604N3-G

Description
Manufacturer: Microchip Technology Win Source Part Number: 1081492-TN0604N3-G Packaging: Bulk Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 740mW (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-92-3 Dimension: TO-226-3, TO-92-3 (TO-226AA) Drain-Source Breakdown Voltage: 40V Continuous Drain Current at 25°C: 700mA (Tj) Gate-Source Threshold Voltage: 1.6V @ 1mA Max Input Capacitance: 190pF @ 20V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 750 mOhm @ 1.5A, 10V Popularity: Medium Fake Threat In the Open Market: 28 pct. Supply and Demand Status: Sufficient
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - TN0604N3-G - 1081492-TN0604N3-G - Win Source Electronics
    Win Source Electronics
  • Single FETs, MOSFETs - TN0604N3-G-ND - DigiKey
    DigiKey
  • Single FETs, MOSFETs - TN0604N3-G - ODG (Origin Data Global)
    ODG (Origin Data Global)
  • Mosfet, N-Ch, 40V, 0.7A, To-92; Channel Type Microchip - 53Y4231 - Newark, An Avnet Company
    Newark, An Avnet Company
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - TN0604N3-G - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
  • Transistor - 87581392 - Radwell International
    Radwell International
Request a Quote Datasheet
Description
Manufacturer: Microchip Technology Win Source Part Number: 1081492-TN0604N3-G Packaging: Bulk Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 740mW (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-92-3 Dimension: TO-226-3, TO-92-3 (TO-226AA) Drain-Source Breakdown Voltage: 40V Continuous Drain Current at 25°C: 700mA (Tj) Gate-Source Threshold Voltage: 1.6V @ 1mA Max Input Capacitance: 190pF @ 20V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 750 mOhm @ 1.5A, 10V Popularity: Medium Fake Threat In the Open Market: 28 pct. Supply and Demand Status: Sufficient
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - TN0604N3-G - 1081492-TN0604N3-G - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - TN0604N3-G
1081492-TN0604N3-G
TRANSISTORS - Transistors - FETs, MOSFETs - RF - TN0604N3-G 1081492-TN0604N3-G
Manufacturer: Microchip Technology Win Source Part Number: 1081492-TN0604N3-G Packaging: Bulk Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 740mW (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-92-3 Dimension: TO-226-3, TO-92-3 (TO-226AA) Drain-Source Breakdown Voltage: 40V Continuous Drain Current at 25°C: 700mA (Tj) Gate-Source Threshold Voltage: 1.6V @ 1mA Max Input Capacitance: 190pF @ 20V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 750 mOhm @ 1.5A, 10V Popularity: Medium Fake Threat In the Open Market: 28 pct. Supply and Demand Status: Sufficient

Manufacturer: Microchip Technology
Win Source Part Number: 1081492-TN0604N3-G
Packaging: Bulk
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 740mW (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-92-3
Dimension: TO-226-3, TO-92-3 (TO-226AA)
Drain-Source Breakdown Voltage: 40V
Continuous Drain Current at 25°C: 700mA (Tj)
Gate-Source Threshold Voltage: 1.6V @ 1mA
Max Input Capacitance: 190pF @ 20V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 750 mOhm @ 1.5A, 10V
Popularity: Medium
Fake Threat In the Open Market: 28 pct.
Supply and Demand Status: Sufficient

Buy Now Datasheet
Single FETs, MOSFETs - TN0604N3-G-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
TN0604N3-G-ND
Single FETs, MOSFETs TN0604N3-G-ND
N-Channel 40V 700mA (Tj) 740mW (Ta) Through Hole TO-92-3

N-Channel 40V 700mA (Tj) 740mW (Ta) Through Hole TO-92-3

Buy Now Datasheet
Single FETs, MOSFETs - TN0604N3-G - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
TN0604N3-G
Single FETs, MOSFETs TN0604N3-G
MOSFET N-CH 40V 700MA TO92-3

MOSFET N-CH 40V 700MA TO92-3

Supplier's Site Datasheet
Mosfet, N-Ch, 40V, 0.7A, To-92; Channel Type Microchip - 53Y4231 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N-Ch, 40V, 0.7A, To-92; Channel Type Microchip
53Y4231
Mosfet, N-Ch, 40V, 0.7A, To-92; Channel Type Microchip 53Y4231
MOSFET, N-CH, 40V, 0.7A, TO-92; Channel Type:N Channel; Drain Source Voltage Vds:40V; Continuous Drain Current Id:700mA; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:1.6V RoHS Compliant: Yes

MOSFET, N-CH, 40V, 0.7A, TO-92; Channel Type:N Channel; Drain Source Voltage Vds:40V; Continuous Drain Current Id:700mA; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:1.6V RoHS Compliant: Yes

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - TN0604N3-G - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
TN0604N3-G
Discrete Semiconductor Products - Transistors - FETs, MOSFETs TN0604N3-G
MOSFET N-CH 40V 700MA TO92-3

MOSFET N-CH 40V 700MA TO92-3

Supplier's Site
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
MOSFET
TN0604N3-G
MOSFET TN0604N3-G
MOSFET 40V 0.75Ohm

MOSFET 40V 0.75Ohm

Buy Now
Transistor - 87581392 - Radwell International
Radwell International
Willingboro, NJ, United States
Transistor
87581392
Transistor 87581392
TRANSISTOR, MOSFET, N-CHANNEL, 20VGS, 40V, 700MA, 740MW, TO-92-3. FREE 2 YEAR RADWELL WARRANTY

TRANSISTOR, MOSFET, N-CHANNEL, 20VGS, 40V, 700MA, 740MW, TO-92-3. FREE 2 YEAR RADWELL WARRANTY

Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey ODG (Origin Data Global) Newark, An Avnet Company Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED Radwell International
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 1081492-TN0604N3-G TN0604N3-G-ND TN0604N3-G 53Y4231 TN0604N3-G TN0604N3-G 87581392
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - TN0604N3-G Single FETs, MOSFETs Single FETs, MOSFETs Mosfet, N-Ch, 40V, 0.7A, To-92; Channel Type Microchip Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET Transistor
Polarity N-Channel; N-Channel N-Channel N-Channel; N-Channel
V(BR)DSS 40 volts 40 volts
PD 740 milliwatts 740 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
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