MOSFET N-CH 100V 350MA TO92-3 Product overview: TN0110N3-G from Microchip Technology is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 100V, 350MA. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 100V, 350MA, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-TN0110N3-G can be used for catalog matching and distributor lookup.
Manufacturer: Microchip Technology
Win Source Part Number: 048057-TN0110N3-G
Packaging: Bulk
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 1W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-92-3
Dimension: TO-226-3, TO-92-3 (TO-226AA)
Drain-Source Breakdown Voltage: 100V
Continuous Drain Current at 25°C: 350mA (Tj)
Gate-Source Threshold Voltage: 2V @ 500μA
Max Input Capacitance: 60pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 3 Ohm @ 500mA, 10V
Popularity: Medium
Fake Threat In the Open Market: 49 pct.
Supply and Demand Status: Limited
N-Channel 100V 350mA (Tj) 1W (Tc) Through Hole TO-92-3
MOSFET N-CH 100V 350MA TO92-3
MOSFET, 100V, 0.35A, 150DEG C, 1W; Transistor Polarity:N Channel; Continuous Drain Current Id:350mA; Drain Source Voltage Vds:100V; On Resistance Rds(on):1.6ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2V; Power RoHS Compliant: Yes
| ERSAELECTRONICS PTE. LTD. | Win Source Electronics | DigiKey | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 278-TN0110N3-G | 048057-TN0110N3-G | TN0110N3-G-ND | TN0110N3-G | TN0110N3-G | 72AC6723 |
| Product Name | 100V 350MA MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - TN0110N3-G | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET | Mosfet, 100V, 0.35A, 150Deg C, 1W; Transistor Polarity Microchip |
| Polarity | N-Channel | N-Channel; N-Channel | N-Channel | |||
| MOSFET Operating Mode | Enhancement | |||||
| V(BR)DSS | 100 volts | 100 volts | ||||
| Transconductance | 2.25E-4 kS | |||||
| PD | 1 milliwatts | 1000 milliwatts |
