MOSFET N-CH 40V 630MA TO243AA Product overview: TN0104N8-G from Microchip Technology is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 40V, 630MA. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 40V, 630MA, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-TN0104N8-G can be used for catalog matching and distributor lookup.
N-Channel 40V 630mA (Tj) 1.6W (Tc) Surface Mount TO-243AA (SOT-89)
N-Channel 40V 630mA (Tj) 1.6W (Tc) Surface Mount TO-243AA (SOT-89)
N-Channel 40V 630mA (Tj) 1.6W (Tc) Surface Mount TO-243AA (SOT-89)
MOSFET N-CH 40V 630MA TO243AA
Manufacturer: Microchip Technology
Win Source Part Number: 119324-TN0104N8-G
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 1.6W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 3V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-243AA (SOT-89)
Dimension: TO-243AA
Drain-Source Breakdown Voltage: 40V
Continuous Drain Current at 25°C: 630mA (Tj)
Gate-Source Threshold Voltage: 1.6V @ 500μA
Max Input Capacitance: 70pF @ 20V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 2 Ohm @ 1A, 10V
Popularity: Medium
Fake Threat In the Open Market: 69 pct.
Supply and Demand Status: Balance
MOSFET, N-CH, 40V, 0.63A, TO-243AA; Transistor Polarity:N Channel; Continuous Drain Current Id:630mA; Drain Source Voltage Vds:40V; On Resistance Rds(on):2ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.6V; Power RoHS Compliant: Yes
MOSFET N-CH 40V 630MA TO243AA
| ERSAELECTRONICS PTE. LTD. | DigiKey | ODG (Origin Data Global) | Win Source Electronics | Newark, An Avnet Company | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 278-TN0104N8-G | TN0104N8-GCT-ND | TN0104N8-G | 119324-TN0104N8-G | 57AC4020 | TN0104N8-G | TN0104N8-G |
| Product Name | 40V 630MA MOSFET Transistor | Single FETs, MOSFETs | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - TN0104N8-G | Mosfet, N-Ch, 40V, 0.63A, To-243Aa; Transistor Polarity Microchip | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel | N-Channel | N-Channel; N-Channel | N-Channel; N-Channel | |||
| MOSFET Operating Mode | Enhancement | ||||||
| V(BR)DSS | 40 volts | 40 volts | 40 volts | ||||
| PD | 1.6 milliwatts | 1600 milliwatts | 1600 milliwatts | ||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) |
