The TN0104 is an N-channel enhancement-mode vertical DMOS FET for low-threshold switching applications. It is available in 3-lead TO-92 and 3-lead SOT-89 packages. The device has a 40 V drain-to-source breakdown voltage and a maximum gate threshold voltage of 1.6 V. On-state resistance is 1.5 Ω at 10 V gate bias for TO-92, and 2 Ω for SOT-89. It operates from -55°C to +150°C, with thermal resistance of 132 °C/W for TO-92 and 133 °C/W for SOT-89. Input capacitance is 70 pF, and switching delays are under 10 ns. The transistor supports on-state currents up to 2.6 A and is free from thermal runaway and secondary breakdown.
This low threshold, enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. Vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.
Additional Features
| Microchip Technology, Inc. | |
|---|---|
| Product Category | Transistors |
| Product Number | TN0104 |
| Product Name | 40V N-Channel Enhancement-Mode Vertical DMOS FET |
| Polarity | N-Channel |
