The TD9944 is a dual N-channel enhancement-mode vertical DMOS FET designed for switching and amplifying applications requiring low threshold voltage, high input impedance, and fast switching speeds. It is packaged in an 8-lead SOIC with a body size of 4.90 mm × 3.90 mm and a maximum height of 1.75 mm. The device has a drain-to-source breakdown voltage of 240 V, a maximum on-resistance of 6.0 Ω at 10 V gate voltage, and a gate threshold voltage of 2.0 V maximum. It operates over a temperature range of -55°C to +150°C and meets RoHS compliance criteria. The part is free from thermal runaway and secondary breakdown.
This low threshold, enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. Vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.
Additional Features
| Microchip Technology, Inc. | |
|---|---|
| Product Category | Transistors |
| Product Number | TD9944 |
| Product Name | 240V, 6.0 Ohm, Dual N-Channel, Enhancement-Mode, Vertical DMOS FET |
| Polarity | N-Channel |
