Microchip Technology, Inc. SY10EP05V

Description
The SY10EP05V is a 2-input differential AND/NAND gate. The device is functionally equivalent to the EL05 device. With AC performance much faster that the EL05 device, the EP05V is ideal for applications requiring the fastest AC performance available. Additional Features 3.3V or 5V power supply options 180ps typical propagation delay Maximum frequency >3GHz typical Internal input resistors: pulldown on D, pulldown and pullup on /D Q output will default LOW with inputs open or at VEE Transistor count: 126 Available in 8-pin MSOP and SOIC packages
Description
The SY10EP05V is a 2-input differential AND/NAND gate. The device is functionally equivalent to the EL05 device. With AC performance much faster that the EL05 device, the EP05V is ideal for applications requiring the fastest AC performance available. Additional Features 3.3V or 5V power supply options 180ps typical propagation delay Maximum frequency >3GHz typical Internal input resistors: pulldown on D, pulldown and pullup on /D Q output will default LOW with inputs open or at VEE Transistor count: 126 Available in 8-pin MSOP and SOIC packages
Datasheet
Datasheet Summary
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The SY10EP05V is a 3.3V or 5V ECL differential AND/NAND gate designed for high-speed applications with a typical propagation delay of 180ps and a maximum toggle frequency of 3GHz. It is housed in an 8-lead SOIC package with dimensions specified by JEDEC standards. The device operates over a temperature range of -40°C to +85°C, features internal input resistors with pull-down on D and pull-down/pull-up on /D, and defaults the Q output low when inputs are open or tied to VEE. It meets RoHS compliance, as indicated by the Pb-free JEDEC e3 designation, and is qualified for industrial use.

Datasheet Summary
Powered by GS/AI

The SY10EP05V is a 3.3V or 5V ECL differential AND/NAND gate designed for high-speed applications with a typical propagation delay of 180ps and a maximum toggle frequency of 3GHz. It is housed in an 8-lead SOIC package with dimensions specified by JEDEC standards. The device operates over a temperature range of -40°C to +85°C, features internal input resistors with pull-down on D and pull-down/pull-up on /D, and defaults the Q output low when inputs are open or tied to VEE. It meets RoHS compliance, as indicated by the Pb-free JEDEC e3 designation, and is qualified for industrial use.

Suppliers

Company
Product
Description
Supplier Links
 - SY10EP05V - Microchip Technology, Inc.
Chandler, AZ, United States
The SY10EP05V is a 2-input differential AND/NAND gate. The device is functionally equivalent to the EL05 device. With AC performance much faster that the EL05 device, the EP05V is ideal for applications requiring the fastest AC performance available. Additional Features 3.3V or 5V power supply options 180ps typical propagation delay Maximum frequency >3GHz typical Internal input resistors: pulldown on D, pulldown and pullup on /D Q output will default LOW with inputs open or at VEE Transistor count: 126 Available in 8-pin MSOP and SOIC packages

The SY10EP05V is a 2-input differential AND/NAND gate. The device is functionally equivalent to the EL05 device. With AC performance much faster that the EL05 device, the EP05V is ideal for applications requiring the fastest AC performance available.

Additional Features

    • 3.3V or 5V power supply options
    • 180ps typical propagation delay
    • Maximum frequency >3GHz typical
    • Internal input resistors: pulldown on D, pulldown and pullup on /D
    • Q output will default LOW with inputs open or at VEE
    • Transistor count: 126
    • Available in 8-pin MSOP and SOIC packages
Supplier's Site Datasheet

Technical Specifications

  Microchip Technology, Inc.
Product Category Transistors
Product Number SY10EP05V
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