The MMS006PP3 is a DC-to-20 GHz, non-reflective gallium arsenide (GaAs) pseudomorphic highelectron-mobilit
y transistor (pHEMT) single pole double throw (SPDT) monolithic microwave integrated circuit (MMIC) switch in a plastic leadless 3 mm × 3 mm surface-mount package. The MMS006AA is a die only version of the same. The switch delivers over 40 dB of isolation across the DC-to-20 GHz band while maintaining a low insertion loss of less than 2.0 dB. The RF ports are internally matched to 50 Ω, which allows for easy integration into multi-chip modules (MCMs).
Additional Features
DC–20 GHz, GaAs, SP2T Switch
Low insertion loss: <2 dB
High isolation: >40 dB
Fast switching: <10 ns
High Input P1dB: 24 dBm
High Input IP3: 42 dBm
Available in Non-reflective topology
Available in compact die or QFN package
The MMS006AA device is designed for test instrumentation, military radar, radio, EW, ECM and general purpose microwave applications
The MMS006PP3 is a DC-to-20 GHz, non-reflective gallium arsenide (GaAs) pseudomorphic highelectron-mobility transistor (pHEMT) single pole double throw (SPDT) monolithic microwave integrated circuit (MMIC) switch in a plastic leadless 3 mm × 3 mm surface-mount package. The MMS006AA is a die only version of the same. The switch delivers over 40 dB of isolation across the DC-to-20 GHz band while maintaining a low insertion loss of less than 2.0 dB. The RF ports are internally matched to 50 Ω, which allows for easy integration into multi-chip modules (MCMs).
Additional Features
- DC–20 GHz, GaAs, SP2T Switch
- Low insertion loss: <2 dB
- High isolation: >40 dB
- Fast switching: <10 ns
- High Input P1dB: 24 dBm
- High Input IP3: 42 dBm
- Available in Non-reflective topology
- Available in compact die or QFN package
- The MMS006AA device is designed for test instrumentation, military radar, radio, EW, ECM and general purpose microwave applications
