Microchip Technology, Inc. Wideband SPDT Switch low insertion loss SWITCH-SPDT

Description

The MMS006PP3 is a DC-to-20 GHz, non-reflective gallium arsenide (GaAs) pseudomorphic highelectron-mobilit y transistor (pHEMT) single pole double throw (SPDT) monolithic microwave integrated circuit (MMIC) switch in a plastic leadless 3 mm × 3 mm surface-mount package. The MMS006AA is a die only version of the same. The switch delivers over 40 dB of isolation across the DC-to-20 GHz band while maintaining a low insertion loss of less than 2.0 dB. The RF ports are internally matched to 50 Ω, which allows for easy integration into multi-chip modules (MCMs). Additional Features DC–20 GHz, GaAs, SP2T Switch Low insertion loss: <2 dB High isolation: >40 dB Fast switching: <10 ns High Input P1dB: 24 dBm High Input IP3: 42 dBm Available in Non-reflective topology Available in compact die or QFN package The MMS006AA device is designed for test instrumentation, military radar, radio, EW, ECM and general purpose microwave applications

Microchip Technology, Inc.

Description

Datasheet

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The MMS006AA is a DC-to-20 GHz gallium arsenide (GaAs) monolithic microwave integrated circuit (MMIC) single pole double throw (SPDT) non-reflective switch in die form, measuring 0.85 mm × 1.30 mm × 0.1 mm. It offers insertion loss less than 2 dB and isolation greater than 40 dB across the full frequency range, with fast switching times under 10 ns. The device operates with control voltages of 0 V and -5 V, consumes no DC current, and features 50 Ω internally matched RF ports. It supports an input P1dB of 24 dBm and an input third-order intercept point of 42 dBm. Operating temperature ranges from -40 °C to 85 °C, with a storage temperature range of -65 °C to 150 °C. The switch is designed for test instrumentation, military radar, electronic warfare, and general microwave applications.

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