Microchip Technology, Inc. RF Amplifiers SST12LP14A-QVCE

The SST12LP14A-QVCE is a high-power, high-gain RF amplifier designed for 2.4-2.5 GHz applications, utilizing InGaP/GaAs HBT technology. It typically delivers 29 dB of gain with a power-added efficiency of 23% at an output power of 22 dBm for 802.11g applications, and 25% efficiency at 23 dBm for 802.11b. The amplifier exhibits excellent linearity, meeting the 802.11g spectrum mask at 23 dBm and maintaining a low error vector magnitude (EVM) of approximately 3% at 21 dBm output power. The device features a single-pin low reference current power-up/down control, with a reference current of less than 2 mA, and a low idle current of around 70 mA. It has a fast turn-on/off time of less than 100 ns and is stable over a temperature range of 0¬8C to +85¬8C, with only 1 dB gain variation across this range. The on-chip power detector provides a dynamic range of 20 dB and maintains high stability with minimal variation across temperature and frequency. The SST12LP14A-QVCE is packaged in a 16-contact VQFN format, making it suitable for compact designs in WLAN, home RF, and cordless phone applications. It is RoHS compliant, ensuring it meets environmental standards.