The MSCSMG170ANPCM15TPAG is an ANPC 1700V silicon carbide (SiC) power module combining SiC MOSFETs and IGBT3 devices for high-efficiency AC/DC conversion. It features an isolated package with direct heat sink mounting, weighing 250 g and requiring 3 to 5 N·m mounting torque. The SiC MOSFET supports 1700 V drain-source voltage and 142 A continuous current at 80 °C. The IGBT supports 1700 V collector-emitter voltage and 100 A continuous current. Junction-to-case thermal resistance is 0.178 °C/W for the SiC MOSFET, 0.16 °C/W for the IGBT, and 0.29 °C/W for the diode. It includes an internal NTC thermistor (50 kΩ at 25 °C) and operates with junction temperatures up to 175 °C for the SiC MOSFET and 150 °C for the IGBT and diode. RoHS compliant with 4000 V RMS isolation.
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The MSCSMG170ANPCM15TPAG is an ANPC 1700V silicon carbide (SiC) power module combining SiC MOSFETs and IGBT3 devices for high-efficiency AC/DC conversion. It features an isolated package with direct heat sink mounting, weighing 250 g and requiring 3 to 5 N·m mounting torque. The SiC MOSFET supports 1700 V drain-source voltage and 142 A continuous current at 80 °C. The IGBT supports 1700 V collector-emitter voltage and 100 A continuous current. Junction-to-case thermal resistance is 0.178 °C/W for the SiC MOSFET, 0.16 °C/W for the IGBT, and 0.29 °C/W for the diode. It includes an internal NTC thermistor (50 kΩ at 25 °C) and operates with junction temperatures up to 175 °C for the SiC MOSFET and 150 °C for the IGBT and diode. RoHS compliant with 4000 V RMS isolation.
