Microchip Technology, Inc. Silicon Carbide Test/Evaluation Products MSCSICSP6/REF3

Description
Low Inductance SP6LI Driver Reference Design Featuring brand new SP6LI (Low Inductance). Stray inductance < 3 nH to fully benefit from SiC. Designed to be easy to parallel. Up to 1200 V and 586 A Half Bridge Driver Up to 400 kHz switching frequency 12 V VIN supply Capable of 16 W of gate drive power / side 30 A Peak Source output current Min.100 KV/uS CMTI -5 V/+20 V output gate drive Low propagation delay variability Fault signaling Under voltage lockout protection Programmable dead time protection Desaturation protection
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Description
Low Inductance SP6LI Driver Reference Design Featuring brand new SP6LI (Low Inductance). Stray inductance < 3 nH to fully benefit from SiC. Designed to be easy to parallel. Up to 1200 V and 586 A Half Bridge Driver Up to 400 kHz switching frequency 12 V VIN supply Capable of 16 W of gate drive power / side 30 A Peak Source output current Min.100 KV/uS CMTI -5 V/+20 V output gate drive Low propagation delay variability Fault signaling Under voltage lockout protection Programmable dead time protection Desaturation protection
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Suppliers

Company
Product
Description
Supplier Links
Silicon Carbide Test/Evaluation Products - MSCSICSP6/REF3 - Richardson RFPD
Downers Grove, IL, United States
Silicon Carbide Test/Evaluation Products
MSCSICSP6/REF3
Silicon Carbide Test/Evaluation Products MSCSICSP6/REF3
Low Inductance SP6LI Driver Reference Design Featuring brand new SP6LI (Low Inductance). Stray inductance < 3 nH to fully benefit from SiC. Designed to be easy to parallel. Up to 1200 V and 586 A Half Bridge Driver Up to 400 kHz switching frequency 12 V VIN supply Capable of 16 W of gate drive power / side 30 A Peak Source output current Min.100 KV/uS CMTI -5 V/+20 V output gate drive Low propagation delay variability Fault signaling Under voltage lockout protection Programmable dead time protection Desaturation protection

Low Inductance SP6LI Driver Reference Design

  • Featuring brand new SP6LI (Low Inductance). Stray inductance < 3 nH to fully benefit from SiC. Designed to be easy to parallel. Up to 1200 V and 586 A
  • Half Bridge Driver
  • Up to 400 kHz switching frequency
  • 12 V VIN supply
  • Capable of 16 W of gate drive power / side
  • 30 A Peak Source output current
  • Min.100 KV/uS CMTI
  • -5 V/+20 V output gate drive
  • Low propagation delay variability
  • Fault signaling
  • Under voltage lockout protection
  • Programmable dead time protection
  • Desaturation protection
Supplier's Site

Technical Specifications

  Richardson RFPD
Product Category Electronic Development Boards
Product Number MSCSICSP6/REF3
Product Name Silicon Carbide Test/Evaluation Products
Category Developement Board
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