This design is optimized to drive SiC devices at a high speed with desaturation protection. It is a base design that can be simplified depending upon the individual system requirements. Requires only a +24V power input.
Adjustable -5V, +20V output gate drive.
Galvanic isolation of more than 2000V on both gate drivers.
Capable of 8W of gate drive power / side
Peak output current of up to 30A
Maximum switching frequency greater than 400KHz
Single-ended or RS485/RS422 differential input gate control
Shoot through (short-circuit) protection
+/- 100KV/uS capability
Programmable dead time protection
Fault signaling
Under voltage lockout protection
This design is optimized to drive SiC devices at a high speed with desaturation protection. It is a base design that can be simplified depending upon the individual system requirements. Requires only a +24V power input.
- Adjustable -5V, +20V output gate drive.
- Galvanic isolation of more than 2000V on both gate drivers.
- Capable of 8W of gate drive power / side
- Peak output current of up to 30A
- Maximum switching frequency greater than 400KHz
- Single-ended or RS485/RS422 differential input gate control
- Shoot through (short-circuit) protection
- +/- 100KV/uS capability
- Programmable dead time protection
- Fault signaling
- Under voltage lockout protection
