Microchip Technology, Inc. 1200V/Full Bridge/SiC Diode modules MSCDC100H120AG-Module

Description
SiC Schottky Diode Zero reverse recovery Zero forward recovery Temperature Independent switching behavior Positive temperature coefficient on VF Low stray inductance High efficiency converter Outstanding performance at high frequency operation Stable temperature behavior Direct mounting to heatsink (isolated package) Low junction to case thermal resistance RoHS Compliant Additional Features Configuration: Full Bridge VRRM (V): 1200 VF (V): 1.5 Current (A) Tc=80C: 100 Silicon type: SiC diode Package: SP6C
Datasheet
Description
SiC Schottky Diode Zero reverse recovery Zero forward recovery Temperature Independent switching behavior Positive temperature coefficient on VF Low stray inductance High efficiency converter Outstanding performance at high frequency operation Stable temperature behavior Direct mounting to heatsink (isolated package) Low junction to case thermal resistance RoHS Compliant Additional Features Configuration: Full Bridge VRRM (V): 1200 VF (V): 1.5 Current (A) Tc=80C: 100 Silicon type: SiC diode Package: SP6C
Datasheet

Suppliers

Company
Product
Description
Supplier Links
1200V/Full Bridge/SiC Diode modules - MSCDC100H120AG-Module - Microchip Technology, Inc.
Chandler, AZ, United States
1200V/Full Bridge/SiC Diode modules
MSCDC100H120AG-Module
1200V/Full Bridge/SiC Diode modules MSCDC100H120AG-Module
SiC Schottky Diode Zero reverse recovery Zero forward recovery Temperature Independent switching behavior Positive temperature coefficient on VF Low stray inductance High efficiency converter Outstanding performance at high frequency operation Stable temperature behavior Direct mounting to heatsink (isolated package) Low junction to case thermal resistance RoHS Compliant Additional Features Configuration: Full Bridge VRRM (V): 1200 VF (V): 1.5 Current (A) Tc=80C: 100 Silicon type: SiC diode Package: SP6C
  • SiC Schottky Diode
  • Zero reverse recovery
  • Zero forward recovery
  • Temperature Independent switching behavior
  • Positive temperature coefficient on VF
  • Low stray inductance
  • High efficiency converter
  • Outstanding performance at high frequency operation
  • Stable temperature behavior
  • Direct mounting to heatsink (isolated package)
  • Low junction to case thermal resistance
  • RoHS Compliant

Additional Features

    • Configuration: Full Bridge
    • VRRM (V): 1200
    • VF (V): 1.5
    • Current (A) Tc=80C: 100
    • Silicon type: SiC diode
    • Package: SP6C
Supplier's Site Datasheet

Technical Specifications

  Microchip Technology, Inc.
Product Category General Purpose Diodes
Product Number MSCDC100H120AG-Module
Product Name 1200V/Full Bridge/SiC Diode modules
VF 1.5 volts
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