SiC Schottky Diode
Zero reverse recovery
Zero forward recovery
Temperature Independent switching behavior
Positive temperature coefficient on VF
Low stray inductance
High efficiency converter
Outstanding performance at high frequency operation
Stable temperature behavior
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
RoHS Compliant
Additional Features
Configuration: Phase leg
VRRM (V): 1200
VF (V): 1.5
Current (A) Tc=80C: 100
Silicon type: SiC diode
Package: D1P
Microchip Technology, Inc.
Done
Datasheet
Description
SiC Schottky Diode
Zero reverse recovery
Zero forward recovery
Temperature Independent switching behavior
Positive temperature coefficient on VF
Low stray inductance
High efficiency converter
Outstanding performance at high frequency operation
Stable temperature behavior
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
RoHS Compliant
Additional Features
Configuration: Phase leg
VRRM (V): 1200
VF (V): 1.5
Current (A) Tc=80C: 100
Silicon type: SiC diode
Package: D1P
SiC Schottky Diode
Zero reverse recovery
Zero forward recovery
Temperature Independent switching behavior
Positive temperature coefficient on VF
Low stray inductance
High efficiency converter
Outstanding performance at high frequency operation
Stable temperature behavior
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
RoHS Compliant
Additional Features
Configuration: Phase leg
VRRM (V): 1200
VF (V): 1.5
Current (A) Tc=80C: 100
Silicon type: SiC diode
Package: D1P
SiC Schottky Diode
Zero reverse recovery
Zero forward recovery
Temperature Independent switching behavior
Positive temperature coefficient on VF
Low stray inductance
High efficiency converter
Outstanding performance at high frequency operation