Microchip Technology, Inc. Silicon Carbide MOSFETs MSC090SMA070B

Description
The silicon carbide (SiC) power MOSFET product line from Microsemi increases the performance over silicon MOSFET and silicon IGBT solutions while lowering the total cost of ownership for high-voltage applications. The MSC090SMA070B device is a 700 V, 90 mΩ SiC MOSFET in a TO-247 package. Features Low capacitances and low gate charge Fast switching speed due to low internal gate resistance (ESR) Stable operation at high junction temperature, TJ(max) = +175C Fast and reliable body diode Superior avalanche ruggedness RoHS Compliant Benefits High efficiency to enable lighter, more compact system Simple to drive and easy to parallel Improved thermal capabilities and lower switching losses Eliminates the need of external freewheeling diode Lower system cost of ownership Applications PV inverter, converter and industrial motor drives Smart grid transmission & distribution Induction heating, and welding H/EV powertrain and EV charger Power supply and distribution
  • Silicon Carbide MOSFETs - MSC090SMA070B - Richardson RFPD
    Richardson RFPD
  • Single FETs, MOSFETs - 691-MSC090SMA070B-ND - DigiKey
    DigiKey
  • Discrete Semiconductor Products- Transistors- FETs, MOSFETs -Single FETs, MOSFETs - Win Source Electronics
    Win Source Electronics
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - MSC090SMA070B - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
  • Mosfet, N-Ch, 700V, 28A, To-247 Rohs Compliant Microchip - 29AK2563 - Newark, An Avnet Company
    Newark, An Avnet Company
Request a Quote Datasheet
Description
The silicon carbide (SiC) power MOSFET product line from Microsemi increases the performance over silicon MOSFET and silicon IGBT solutions while lowering the total cost of ownership for high-voltage applications. The MSC090SMA070B device is a 700 V, 90 mΩ SiC MOSFET in a TO-247 package. Features Low capacitances and low gate charge Fast switching speed due to low internal gate resistance (ESR) Stable operation at high junction temperature, TJ(max) = +175C Fast and reliable body diode Superior avalanche ruggedness RoHS Compliant Benefits High efficiency to enable lighter, more compact system Simple to drive and easy to parallel Improved thermal capabilities and lower switching losses Eliminates the need of external freewheeling diode Lower system cost of ownership Applications PV inverter, converter and industrial motor drives Smart grid transmission & distribution Induction heating, and welding H/EV powertrain and EV charger Power supply and distribution
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Silicon Carbide MOSFETs - MSC090SMA070B - Richardson RFPD
Richardson RFPD
Downers Grove, IL, United States
Silicon Carbide MOSFETs
MSC090SMA070B
Silicon Carbide MOSFETs MSC090SMA070B
The silicon carbide (SiC) power MOSFET product line from Microsemi increases the performance over silicon MOSFET and silicon IGBT solutions while lowering the total cost of ownership for high-voltage applications. The MSC090SMA070B device is a 700 V, 90 mΩ SiC MOSFET in a TO-247 package. Features Low capacitances and low gate charge Fast switching speed due to low internal gate resistance (ESR) Stable operation at high junction temperature, TJ(max) = +175C Fast and reliable body diode Superior avalanche ruggedness RoHS Compliant Benefits High efficiency to enable lighter, more compact system Simple to drive and easy to parallel Improved thermal capabilities and lower switching losses Eliminates the need of external freewheeling diode Lower system cost of ownership Applications PV inverter, converter and industrial motor drives Smart grid transmission & distribution Induction heating, and welding H/EV powertrain and EV charger Power supply and distribution

The silicon carbide (SiC) power MOSFET product line from Microsemi increases the performance over silicon MOSFET and silicon IGBT solutions while lowering the total cost of ownership for high-voltage applications. The MSC090SMA070B device is a 700 V, 90 mΩ SiC MOSFET in a TO-247 package.

Features

  • Low capacitances and low gate charge
  • Fast switching speed due to low internal gate resistance (ESR)
  • Stable operation at high junction temperature, TJ(max) = +175C
  • Fast and reliable body diode
  • Superior avalanche ruggedness
  • RoHS Compliant

Benefits

  • High efficiency to enable lighter, more compact system
  • Simple to drive and easy to parallel
  • Improved thermal capabilities and lower switching losses
  • Eliminates the need of external freewheeling diode
  • Lower system cost of ownership

Applications

  • PV inverter, converter and industrial motor drives
  • Smart grid transmission & distribution
  • Induction heating, and welding
  • H/EV powertrain and EV charger
  • Power supply and distribution
Supplier's Site Datasheet
Single FETs, MOSFETs - 691-MSC090SMA070B-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
691-MSC090SMA070B-ND
Single FETs, MOSFETs 691-MSC090SMA070B-ND
N-Channel 700V Through Hole TO-247-3

N-Channel 700V Through Hole TO-247-3

Buy Now Datasheet
ERSAELECTRONICS PTE. LTD.
Singapore, Singapore
700V MOSFET Transistor
278-MSC090SMA070B
700V MOSFET Transistor 278-MSC090SMA070B
SICFET N-CH 700V TO247-3 Product overview: MSC090SMA070B from Microchip Technology is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 700V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 700V, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-MSC090SMA070B can be used for catalog matching and distributor lookup.

SICFET N-CH 700V TO247-3 Product overview: MSC090SMA070B from Microchip Technology is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 700V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 700V, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-MSC090SMA070B can be used for catalog matching and distributor lookup.

Supplier's Site
Discrete Semiconductor Products- Transistors- FETs, MOSFETs -Single FETs, MOSFETs - - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products- Transistors- FETs, MOSFETs -Single FETs, MOSFETs
Discrete Semiconductor Products- Transistors- FETs, MOSFETs -Single FETs, MOSFETs
Manufacturer: Microchip Technology Category: Discrete Semiconductor Products- Transistors- FETs, MOSFETs -Single FETs, MOSFETs Package: Tube Product Status: Active FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss): 700 V Mounting Type: Through Hole Supplier Device Package: TO-247-3 Package / Case: TO-247-3

Manufacturer: Microchip Technology
Category: Discrete Semiconductor Products- Transistors- FETs, MOSFETs -Single FETs, MOSFETs
Package: Tube
Product Status: Active
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss): 700 V
Mounting Type: Through Hole
Supplier Device Package: TO-247-3
Package / Case: TO-247-3

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - MSC090SMA070B - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
MSC090SMA070B
Discrete Semiconductor Products - Transistors - FETs, MOSFETs MSC090SMA070B
SICFET N-CH 700V TO247-3

SICFET N-CH 700V TO247-3

Supplier's Site
Mosfet, N-Ch, 700V, 28A, To-247 Rohs Compliant Microchip - 29AK2563 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N-Ch, 700V, 28A, To-247 Rohs Compliant Microchip
29AK2563
Mosfet, N-Ch, 700V, 28A, To-247 Rohs Compliant Microchip 29AK2563
MOSFET, N-CH, 700V, 28A, TO-247 ROHS COMPLIANT: YES

MOSFET, N-CH, 700V, 28A, TO-247 ROHS COMPLIANT: YES

Supplier's Site

Technical Specifications

  Richardson RFPD DigiKey ERSAELECTRONICS PTE. LTD. Win Source Electronics Shenzhen Shengyu Electronics Technology Limited Newark, An Avnet Company
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number MSC090SMA070B 691-MSC090SMA070B-ND 278-MSC090SMA070B MSC090SMA070B 29AK2563
Product Name Silicon Carbide MOSFETs Single FETs, MOSFETs 700V MOSFET Transistor Discrete Semiconductor Products- Transistors- FETs, MOSFETs -Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs Mosfet, N-Ch, 700V, 28A, To-247 Rohs Compliant Microchip
rDS(on) 0.0860 ohms
Package Type TO-247; TO-247-3L TO-247; TO-247-3 Tube TO-247; SOT3 TO-247; TO-247-3 TO-3; TO-247
Polarity N-Channel N-Channel N-Channel
Transistor Technology / Material Silicon Carbide
MOSFET Operating Mode Enhancement
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