Manufacturer: Microchip Technology
Category: Discrete Semiconductor Products- Transistors -FETs, MOSFETs -Single FETs, MOSFETs
Package: Bulk
Product Status: Active
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss): 3300 V
Power Dissipation (Max): 381W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
MOSFET, N-CH, 3.3KV, 41A, TO-247 ROHS COMPLIANT: YES
MOSFET SIC 3300 V 80 MOHM TO-247
| Win Source Electronics | Newark, An Avnet Company | Acme Chip Technology Co., Limited | |
|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 38AK6571 | MSC080SMA330B4 | |
| Product Name | Discrete Semiconductor Products- Transistors -FETs, MOSFETs -Single FETs, MOSFETs | Mosfet, N-Ch, 3.3Kv, 41A, To-247 Rohs Compliant Microchip | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel |
