Microchip Technology, Inc. Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs MSC080SMA120S

Description
Win Source Part Number: 1339279-MSC080SMA120 S Category: Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs Package: Tube Standard Package: 1 Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Drain to Source Voltage (Vdss): 1200 V Power Dissipation (Max): 182W (Tc) Mounting Type: Surface Mount Package / Case: TO-268-3, D³Pak (2 Leads + Tab) , TO-268AA Supplier Device Package: D3Pak Vgs (Max): +23V, -10V Temperature Range - Operating: -55°C ~ 175°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 62 pct. MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Mfr: Microchip Technology Base Product Number: MSC080 Drive Voltage (Max Rds On, Min Rds On): 20V Current - Continuous Drain (Id) @ 25°C: 35A Rds On (Max) @ Id, Vgs: 100mOhm @ 15A, 20V Vgs(th) (Max) @ Id: 2.8V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds: 838 pF @ 1000 V
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs - 1339279-MSC080SMA120S - Win Source Electronics
    Win Source Electronics
  • Single FETs, MOSFETs - MSC080SMA120S-ND - DigiKey
    DigiKey
  • Silicon Carbide MOSFETs - MSC080SMA120S - Richardson RFPD
    Richardson RFPD
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - MSC080SMA120S - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
  • Mosfet, Sic, N-Ch, 1.2Kv, 35A, To-268; Mosfet Module Configuration Microchip - 78AH6587 - Newark, An Avnet Company
    Newark, An Avnet Company
Request a Quote Datasheet
Description
Win Source Part Number: 1339279-MSC080SMA120 S Category: Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs Package: Tube Standard Package: 1 Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Drain to Source Voltage (Vdss): 1200 V Power Dissipation (Max): 182W (Tc) Mounting Type: Surface Mount Package / Case: TO-268-3, D³Pak (2 Leads + Tab) , TO-268AA Supplier Device Package: D3Pak Vgs (Max): +23V, -10V Temperature Range - Operating: -55°C ~ 175°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 62 pct. MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Mfr: Microchip Technology Base Product Number: MSC080 Drive Voltage (Max Rds On, Min Rds On): 20V Current - Continuous Drain (Id) @ 25°C: 35A Rds On (Max) @ Id, Vgs: 100mOhm @ 15A, 20V Vgs(th) (Max) @ Id: 2.8V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds: 838 pF @ 1000 V
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs - 1339279-MSC080SMA120S - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
1339279-MSC080SMA120S
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs 1339279-MSC080SMA120S
Win Source Part Number: 1339279-MSC080SMA120 S Category: Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs Package: Tube Standard Package: 1 Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Drain to Source Voltage (Vdss): 1200 V Power Dissipation (Max): 182W (Tc) Mounting Type: Surface Mount Package / Case: TO-268-3, D³Pak (2 Leads + Tab) , TO-268AA Supplier Device Package: D3Pak Vgs (Max): +23V, -10V Temperature Range - Operating: -55°C ~ 175°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 62 pct. MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Mfr: Microchip Technology Base Product Number: MSC080 Drive Voltage (Max Rds On, Min Rds On): 20V Current - Continuous Drain (Id) @ 25°C: 35A Rds On (Max) @ Id, Vgs: 100mOhm @ 15A, 20V Vgs(th) (Max) @ Id: 2.8V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds: 838 pF @ 1000 V

Win Source Part Number: 1339279-MSC080SMA120S
Category: Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Package: Tube
Standard Package: 1
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 1200 V
Power Dissipation (Max): 182W (Tc)
Mounting Type: Surface Mount
Package / Case: TO-268-3, D³Pak (2 Leads + Tab) , TO-268AA
Supplier Device Package: D3Pak
Vgs (Max): +23V, -10V
Temperature Range - Operating: -55°C ~ 175°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 62 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: Microchip Technology
Base Product Number: MSC080
Drive Voltage (Max Rds On, Min Rds On): 20V
Current - Continuous Drain (Id) @ 25°C: 35A
Rds On (Max) @ Id, Vgs: 100mOhm @ 15A, 20V
Vgs(th) (Max) @ Id: 2.8V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 838 pF @ 1000 V

Buy Now Datasheet
Single FETs, MOSFETs - MSC080SMA120S-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
MSC080SMA120S-ND
Single FETs, MOSFETs MSC080SMA120S-ND
N-Channel 1200V 35A 182W (Tc) Surface Mount D3PAK

N-Channel 1200V 35A 182W (Tc) Surface Mount D3PAK

Buy Now Datasheet
Silicon Carbide MOSFETs - MSC080SMA120S - Richardson RFPD
Richardson RFPD
Downers Grove, IL, United States
Silicon Carbide MOSFETs
MSC080SMA120S
Silicon Carbide MOSFETs MSC080SMA120S
Features Low capacitances and low gate charge Fast switching speed due to low internal gate resistance (ESR) Stable operation at high junction temperature, TJ(max) = +175C Fast and reliable body diode Superior avalanche ruggedness RoHS Compliant Benefits High efficiency to enable lighter, more compact system Simple to drive and easy to parallel Improved thermal capabilities and lower switching losses Eliminates the need of external freewheeling diode Lower system cost of ownership Applications PV inverter, converter and industrial motor drives Smart grid transmission & distribution Induction heating, and welding H/EV powertrain and EV charger Power supply and distribution

Features

  • Low capacitances and low gate charge
  • Fast switching speed due to low internal gate resistance (ESR)
  • Stable operation at high junction temperature, TJ(max) = +175C
  • Fast and reliable body diode
  • Superior avalanche ruggedness
  • RoHS Compliant

Benefits

  • High efficiency to enable lighter, more compact system
  • Simple to drive and easy to parallel
  • Improved thermal capabilities and lower switching losses
  • Eliminates the need of external freewheeling diode
  • Lower system cost of ownership

Applications

  • PV inverter, converter and industrial motor drives
  • Smart grid transmission & distribution
  • Induction heating, and welding
  • H/EV powertrain and EV charger
  • Power supply and distribution
Supplier's Site Datasheet
ERSAELECTRONICS PTE. LTD.
Singapore, Singapore
1200V 35A MOSFET Transistor
278-MSC080SMA120S
1200V 35A MOSFET Transistor 278-MSC080SMA120S
SICFET N-CH 1200V 35A D3PAK Product overview: MSC080SMA120S from Microchip Technology is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 1200V, 35A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 1200V, 35A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-MSC080SMA120S can be used for catalog matching and distributor lookup.

SICFET N-CH 1200V 35A D3PAK Product overview: MSC080SMA120S from Microchip Technology is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 1200V, 35A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 1200V, 35A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-MSC080SMA120S can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - MSC080SMA120S - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
MSC080SMA120S
Discrete Semiconductor Products - Transistors - FETs, MOSFETs MSC080SMA120S
SICFET N-CH 1200V 35A D3PAK

SICFET N-CH 1200V 35A D3PAK

Supplier's Site
Mosfet, Sic, N-Ch, 1.2Kv, 35A, To-268; Mosfet Module Configuration Microchip - 78AH6587 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Mosfet, Sic, N-Ch, 1.2Kv, 35A, To-268; Mosfet Module Configuration Microchip
78AH6587
Mosfet, Sic, N-Ch, 1.2Kv, 35A, To-268; Mosfet Module Configuration Microchip 78AH6587
MOSFET, SIC, N-CH, 1.2KV, 35A, TO-268; MOSFET Module Configuration:Single ; Continuous Drain Current Id:35A; Drain Source Voltage Vds:1.2kV; No. of Pins:3Pins; Rds(on) Test Voltage:20V; Gate Source Threshold Voltage Max:2.8V RoHS Compliant: Yes

MOSFET, SIC, N-CH, 1.2KV, 35A, TO-268; MOSFET Module Configuration:Single; Continuous Drain Current Id:35A; Drain Source Voltage Vds:1.2kV; No. of Pins:3Pins; Rds(on) Test Voltage:20V; Gate Source Threshold Voltage Max:2.8V RoHS Compliant: Yes

Supplier's Site Datasheet

Technical Specifications

  Win Source Electronics DigiKey Richardson RFPD ERSAELECTRONICS PTE. LTD. Shenzhen Shengyu Electronics Technology Limited Newark, An Avnet Company
Product Category Transistors Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 1339279-MSC080SMA120S MSC080SMA120S-ND MSC080SMA120S 278-MSC080SMA120S MSC080SMA120S 78AH6587
Product Name Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs Single FETs, MOSFETs Silicon Carbide MOSFETs 1200V 35A MOSFET Transistor Discrete Semiconductor Products - Transistors - FETs, MOSFETs Mosfet, Sic, N-Ch, 1.2Kv, 35A, To-268; Mosfet Module Configuration Microchip
Polarity N-Channel N-Channel N-Channel
Package Type SOT3 TO-268-3, D3PAK (2 Leads + Tab), TO-268AA TO-268 Tube TO-268-3, D3Pak (2 Leads + Tab), TO-268AA TO-3
Transistor Technology / Material Silicon Carbide
rDS(on) 0.0800 ohms
MOSFET Operating Mode Enhancement
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