Microchip Technology, Inc. Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs MSC080SMA120S

Description
Win Source Part Number: 1339279-MSC080SMA120 S Category: Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs Package: Tube Standard Package: 1 Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Drain to Source Voltage (Vdss): 1200 V Power Dissipation (Max): 182W (Tc) Mounting Type: Surface Mount Package / Case: TO-268-3, D³Pak (2 Leads + Tab) , TO-268AA Supplier Device Package: D3Pak Vgs (Max): +23V, -10V Temperature Range - Operating: -55°C ~ 175°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 62 pct. MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Mfr: Microchip Technology Base Product Number: MSC080 Drive Voltage (Max Rds On, Min Rds On): 20V Current - Continuous Drain (Id) @ 25°C: 35A Rds On (Max) @ Id, Vgs: 100mOhm @ 15A, 20V Vgs(th) (Max) @ Id: 2.8V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds: 838 pF @ 1000 V
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs - 1339279-MSC080SMA120S - Win Source Electronics
    Win Source Electronics
  • Single FETs, MOSFETs - MSC080SMA120S-ND - DigiKey
    DigiKey
  • Mosfet, Sic, N-Ch, 1.2Kv, 35A, To-268; Mosfet Module Configuration Microchip - 78AH6587 - Newark, An Avnet Company
    Newark, An Avnet Company
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - MSC080SMA120S - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
Request a Quote Datasheet
Description
Win Source Part Number: 1339279-MSC080SMA120 S Category: Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs Package: Tube Standard Package: 1 Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Drain to Source Voltage (Vdss): 1200 V Power Dissipation (Max): 182W (Tc) Mounting Type: Surface Mount Package / Case: TO-268-3, D³Pak (2 Leads + Tab) , TO-268AA Supplier Device Package: D3Pak Vgs (Max): +23V, -10V Temperature Range - Operating: -55°C ~ 175°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 62 pct. MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Mfr: Microchip Technology Base Product Number: MSC080 Drive Voltage (Max Rds On, Min Rds On): 20V Current - Continuous Drain (Id) @ 25°C: 35A Rds On (Max) @ Id, Vgs: 100mOhm @ 15A, 20V Vgs(th) (Max) @ Id: 2.8V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds: 838 pF @ 1000 V
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs - 1339279-MSC080SMA120S - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
1339279-MSC080SMA120S
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs 1339279-MSC080SMA120S
Win Source Part Number: 1339279-MSC080SMA120 S Category: Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs Package: Tube Standard Package: 1 Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Drain to Source Voltage (Vdss): 1200 V Power Dissipation (Max): 182W (Tc) Mounting Type: Surface Mount Package / Case: TO-268-3, D³Pak (2 Leads + Tab) , TO-268AA Supplier Device Package: D3Pak Vgs (Max): +23V, -10V Temperature Range - Operating: -55°C ~ 175°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 62 pct. MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Mfr: Microchip Technology Base Product Number: MSC080 Drive Voltage (Max Rds On, Min Rds On): 20V Current - Continuous Drain (Id) @ 25°C: 35A Rds On (Max) @ Id, Vgs: 100mOhm @ 15A, 20V Vgs(th) (Max) @ Id: 2.8V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds: 838 pF @ 1000 V

Win Source Part Number: 1339279-MSC080SMA120S
Category: Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Package: Tube
Standard Package: 1
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 1200 V
Power Dissipation (Max): 182W (Tc)
Mounting Type: Surface Mount
Package / Case: TO-268-3, D³Pak (2 Leads + Tab) , TO-268AA
Supplier Device Package: D3Pak
Vgs (Max): +23V, -10V
Temperature Range - Operating: -55°C ~ 175°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 62 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: Microchip Technology
Base Product Number: MSC080
Drive Voltage (Max Rds On, Min Rds On): 20V
Current - Continuous Drain (Id) @ 25°C: 35A
Rds On (Max) @ Id, Vgs: 100mOhm @ 15A, 20V
Vgs(th) (Max) @ Id: 2.8V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 838 pF @ 1000 V

Buy Now Datasheet
ERSAELECTRONICS PTE. LTD.
Singapore
1200V 35A MOSFET Transistor
278-MSC080SMA120S
1200V 35A MOSFET Transistor 278-MSC080SMA120S
SICFET N-CH 1200V 35A D3PAK Product overview: MSC080SMA120S from Microchip Technology is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 1200V, 35A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 1200V, 35A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-MSC080SMA120S can be used for catalog matching and distributor lookup.

SICFET N-CH 1200V 35A D3PAK Product overview: MSC080SMA120S from Microchip Technology is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 1200V, 35A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 1200V, 35A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-MSC080SMA120S can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Single FETs, MOSFETs - MSC080SMA120S-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
MSC080SMA120S-ND
Single FETs, MOSFETs MSC080SMA120S-ND
N-Channel 1200V 35A 182W (Tc) Surface Mount D3PAK

N-Channel 1200V 35A 182W (Tc) Surface Mount D3PAK

Buy Now Datasheet
Mosfet, Sic, N-Ch, 1.2Kv, 35A, To-268; Mosfet Module Configuration Microchip - 78AH6587 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Mosfet, Sic, N-Ch, 1.2Kv, 35A, To-268; Mosfet Module Configuration Microchip
78AH6587
Mosfet, Sic, N-Ch, 1.2Kv, 35A, To-268; Mosfet Module Configuration Microchip 78AH6587
MOSFET, SIC, N-CH, 1.2KV, 35A, TO-268; MOSFET Module Configuration:Single ; Continuous Drain Current Id:35A; Drain Source Voltage Vds:1.2kV; No. of Pins:3Pins; Rds(on) Test Voltage:20V; Gate Source Threshold Voltage Max:2.8V RoHS Compliant: Yes

MOSFET, SIC, N-CH, 1.2KV, 35A, TO-268; MOSFET Module Configuration:Single; Continuous Drain Current Id:35A; Drain Source Voltage Vds:1.2kV; No. of Pins:3Pins; Rds(on) Test Voltage:20V; Gate Source Threshold Voltage Max:2.8V RoHS Compliant: Yes

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - MSC080SMA120S - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
MSC080SMA120S
Discrete Semiconductor Products - Transistors - FETs, MOSFETs MSC080SMA120S
SICFET N-CH 1200V 35A D3PAK

SICFET N-CH 1200V 35A D3PAK

Supplier's Site

Technical Specifications

  Win Source Electronics ERSAELECTRONICS PTE. LTD. DigiKey Newark, An Avnet Company Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 1339279-MSC080SMA120S 278-MSC080SMA120S MSC080SMA120S-ND 78AH6587 MSC080SMA120S
Product Name Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs 1200V 35A MOSFET Transistor Single FETs, MOSFETs Mosfet, Sic, N-Ch, 1.2Kv, 35A, To-268; Mosfet Module Configuration Microchip Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel N-Channel
Package Type SOT3 Tube TO-268-3, D3PAK (2 Leads + Tab), TO-268AA TO-3 TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
MOSFET Operating Mode Enhancement
V(BR)DSS 1200 volts
PD 182 milliwatts
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