Microchip Technology, Inc. Single FETs, MOSFETs MSC060SMB120SDT/R

1200V, 60 mΩ typical silicon carbide N-channel MOSFET in a TO-263 7-lead XL package with a source sense pin, designed for high-efficiency switching applications such as PV inverters, EV chargers, and industrial motor drives. The device features a maximum junction temperature of 175 °C, a drain-source on-resistance of 60 mΩ at 18V gate bias, and a pulsed drain current rating of 84 A. It includes a fast body diode with 128 nC reverse recovery charge and is 100% UIS avalanche tested to 420 mJ. The package has a thermal resistance junction-to-case of 0.6-0.78 °C/W and weighs 1.6 g. The part is RoHS compliant and qualified to AEC-Q101 for automotive use.