The silicon carbide (SiC) power MOSFET product line from Microsemi increases the performance over silicon MOSFET and silicon IGBT solutions while lowering the total cost of ownership for high-voltage applications. The MSC060SMA070B device is a 700 V, 60 mOhm SiC MOSFET in a TO-247 package.
Features
Low capacitances and low gate charge
Fast switching speed due to low internal gate resistance (ESR)
Stable operation at high junction temperature, TJ(max) = +175C
Fast and reliable body diode
Superior avalanche ruggedness
RoHS Compliant
Benefits
High efficiency to enable lighter/compact system
Simple to drive and easy to parallel
Improved thermal capabilities and lower switching losses
Eliminates the need of external freewheeling diode
Lower system cost of ownership
Applications
PV inverter, converter and industrial motor drives
Smart grid transmission and distribution
Induction heating, and welding
H/EV powertrain and EV charger
Power supply and distribution
The silicon carbide (SiC) power MOSFET product line from Microsemi increases the performance over silicon MOSFET and silicon IGBT solutions while lowering the total cost of ownership for high-voltage applications. The MSC060SMA070B device is a 700 V, 60 mOhm SiC MOSFET in a TO-247 package.
Features
- Low capacitances and low gate charge
- Fast switching speed due to low internal gate resistance (ESR)
- Stable operation at high junction temperature, TJ(max) = +175C
- Fast and reliable body diode
- Superior avalanche ruggedness
- RoHS Compliant
Benefits
- High efficiency to enable lighter/compact system
- Simple to drive and easy to parallel
- Improved thermal capabilities and lower switching losses
- Eliminates the need of external freewheeling diode
- Lower system cost of ownership
Applications
- PV inverter, converter and industrial motor drives
- Smart grid transmission and distribution
- Induction heating, and welding
- H/EV powertrain and EV charger
- Power supply and distribution
