Microchip Technology, Inc. Single FETs, MOSFETs MSC045SMB120SDT/R

1200V, 45 mΩ typical N-channel silicon carbide MOSFET in a TO-263 7-lead XL package with a drain-side thermal pad, designed for high-efficiency switching in industrial and automotive power systems. The device supports continuous drain currents up to 49 A at 25°C and 35 A at 100°C, with a maximum junction temperature of 175°C and a junction-to-case thermal resistance of 0.49-0.63°C/W. It features a body diode eliminating the need for an external freewheeling diode, 100% UIS avalanche ruggedness, and gate-source threshold voltage of 1.9-5.0 V. The part is RoHS compliant and qualified to AEC-Q101 for automotive applications. Package dimensions include a body length of 9.05-9.45 mm, width of 9.80-10.20 mm, and height of 4.30-4.70 mm.