Microchip Technology, Inc. JFETs MQ2N4857UB/TR

N-channel JFET for switching and amplification applications in military and high-reliability circuits, housed in a TO-18 (TO-206AA) package. Features a drain-source voltage rating of 30 V, gate-source breakdown voltage of -30 V, and power dissipation of 1.8 W at +25°C. Operates with junction and storage temperatures from -65°C to +200°C. Meets MIL-PRF-19500/385 qualification standards. Gate-source "off" voltage ranges from -2.0 V to -6.0 V, drain-source "on" resistance is 40 Ω, and drain current at zero gate bias is 20 to 100 mA. Small-signal input capacitance is 18 pF at -10 V gate bias and 1 MHz.