Radiation-hardened PNP silicon switching transistor in a ceramic lid package (UBC variant), qualified to MIL-PRF-19500/255 with a radiation tolerance of 500k rads (Si). Maximum collector-emitter voltage is 60 Vdc, collector current is 600 mA, and total power dissipation at 25 °C is 500 mW. Operating and storage junction temperature ranges from -65 °C to +200 °C. Thermal resistance from junction to ambient is 325 °C/W.
Bipolar (BJT) Transistor PNP 60V 600mA 500mW Surface Mount UB
| DigiKey | |
|---|---|
| Product Category | Transistors |
| Product Number | 150-MNS2N2907AUBP-ND |
| Product Name | Single Bipolar Transistors |
| Polarity | PNP |
