MMA085AA is a gallium arsenide (GaAs) monolithic microwave integrated circuit (MMIC) pseudomorphic high-electron-mobili
ty transistor (pHEMT) distributed amplifier in die form that operates between DC and 40 GHz. It is ideal for test instrumentation and communications infrastructure applications. The amplifier provides a 16 dB of gain, 3.5 dB noise figure, and 19 dBm of output power at 1 dB gain compression at 20 GHz while requiring only 180 mA from an 6 V supply. Output IP3 is typically 35 dBm. The MMA085AA amplifier features RF I/Os that are internally matched to 50 Ω.
MMA085AA is a gallium arsenide (GaAs) monolithic microwave integrated circuit (MMIC) pseudomorphic high-electron-mobility transistor (pHEMT) distributed amplifier in die form that operates between DC and 40 GHz. It is ideal for test instrumentation and communications infrastructure applications. The amplifier provides a 16 dB of gain, 3.5 dB noise figure, and 19 dBm of output power at 1 dB gain compression at 20 GHz while requiring only 180 mA from an 6 V supply. Output IP3 is typically 35 dBm. The MMA085AA amplifier features RF I/Os that are internally matched to 50 Ω.
