The MMA043PP4 is a gallium arsenide (GaAs) pseudomorphic high-electron-mobili
ty transistor (pHEMT) low-noise wideband amplifier in a leadless 4 mm × 4 mm surface-mount package that operates between 0.5 GHz and 12 GHz. The MMA043PP4 amplifier provides 16 dB of gain, 2.0 dB noise figure, and 28 dBm output IP3 and 17 dBm output P1dB while drawing only 55 mA of current from a 5 V supply. P1dB output power of +17 dBm enables the LNA to function as an LO driver for balanced, I/Q, or image reject mixers. The RF ports are internally matched to 50 ?. This product is also available in die format as the MMA043AA.
The MMA044AA is a gallium arsenide (GaAs) pseudomorphic high-electron mobility transistor (pHEMT) monolithic microwave integrated circuit (MMIC) low-noise wideband amplifier die that operates between 6 GHz and 18 GHz. The MMA044AA die provides 21 dB of small signal gain, 1.7 dB noise figure, and output IP3 of 30 dBm, while requiring only 102 mA from a 4 V supply. The P1dB output power of 17 dBm enables the LNA to function as an LO driver for balanced, in-phase quadrature (I/Q), or image reject mixers. The MMA044AA amplifier also features RF ports that are DC blocked and internally matched to 50 ?, which allows for easy integration into multi-chip modules (MCMs).
The MMA043PP4 is a gallium arsenide (GaAs) pseudomorphic high-electron-mobility transistor (pHEMT) low-noise wideband amplifier in a leadless 4 mm × 4 mm surface-mount package that operates between 0.5 GHz and 12 GHz. The MMA043PP4 amplifier provides 16 dB of gain, 2.0 dB noise figure, and 28 dBm output IP3 and 17 dBm output P1dB while drawing only 55 mA of current from a 5 V supply. P1dB output power of +17 dBm enables the LNA to function as an LO driver for balanced, I/Q, or image reject mixers. The RF ports are internally matched to 50 ?. This product is also available in die format as the MMA043AA.
The MMA044AA is a gallium arsenide (GaAs) pseudomorphic high-electron mobility transistor (pHEMT) monolithic microwave integrated circuit (MMIC) low-noise wideband amplifier die that operates between 6 GHz and 18 GHz. The MMA044AA die provides 21 dB of small signal gain, 1.7 dB noise figure, and output IP3 of 30 dBm, while requiring only 102 mA from a 4 V supply. The P1dB output power of 17 dBm enables the LNA to function as an LO driver for balanced, in-phase quadrature (I/Q), or image reject mixers. The MMA044AA amplifier also features RF ports that are DC blocked and internally matched to 50 ?, which allows for easy integration into multi-chip modules (MCMs).
