The LND250 is an N-channel depletion-mode DMOS FET with a drain-to-source breakdown voltage of 500 V and a saturated drain-to-source current range of 1 to 3 mA. It features an integral source-drain diode with a forward voltage drop up to 0.9 V, ESD-protected gate, and operates from -55°C to 150°C. The device is available only in a 3-lead SOT-23 package, measuring 2.90 mm × 1.30 mm with a maximum height of 1.12 mm, and has a thermal resistance of 203 °C/W. It meets RoHS requirements and is Pb-free.
The LND250 is a high voltage N-channel depletion mode (normally-on) transistor utilizing lateral DMOS technology. The gate is ESD protected. The LND250 is ideal for high voltage applications in the areas of normally-on switches, precision constant current sources, voltage ramp generation and amplification.
Additional Features
| Microchip Technology, Inc. | |
|---|---|
| Product Category | Transistors |
| Product Number | LND250 |
| Product Name | N-Channel Depletion-Mode DMOS FET |
| Polarity | N-Channel |
