The LND250 is a high voltage N-channel depletion mode (normally-on) transistor utilizing lateral DMOS technology. The gate is ESD protected. The LND250 is ideal for high voltage applications in the areas of normally-on switches, precision constant current sources, voltage ramp generation and amplification.
Additional Features
Free from secondary breakdown
Low power drive requirement
Ease of paralleling
Excellent thermal stability
Integral source-drain diode
High input impedance and low CISS
ESD gate protection
The LND250 is a high voltage N-channel depletion mode (normally-on) transistor utilizing lateral DMOS technology. The gate is ESD protected. The LND250 is ideal for high voltage applications in the areas of normally-on switches, precision constant current sources, voltage ramp generation and amplification.
Additional Features
- Free from secondary breakdown
- Low power drive requirement
- Ease of paralleling
- Excellent thermal stability
- Integral source-drain diode
- High input impedance and low CISS
- ESD gate protection
