The LND150 is a high voltage N-channel depletion-mode DMOS FET designed for normally-on switching, constant current sources, and amplification applications. It is available in TO-236AB (SOT-23), TO-92, and TO-243AA (SOT-89) packages, with drain-to-source breakdown voltage of 500 V, saturated drain current of 1.0 to 3.0 mA, and on-state resistance of 850 to 1000 Ω. The gate is ESD protected, and the device includes an integral source-drain diode with forward voltage up to 0.9 V. It operates from -55°C to +150°C and is RoHS compliant.
The LND150 is a high voltage N-channel depletion mode (normally-on) transistor utilizing lateral DMOS technology. The gate is ESD protected. The LND150 is ideal for high voltage applications in the areas of normally-on switches, precision constant current sources, voltage ramp generation and amplification.
Additional Features
| Microchip Technology, Inc. | |
|---|---|
| Product Category | Transistors |
| Product Number | LND150 |
| Product Name | N-Channel Depletion-Mode DMOS FET |
| Polarity | N-Channel |
