Microchip Technology, Inc. Single Bipolar Transistors JANTXV2N3999P

NPN silicon power switching transistor qualified to MIL-PRF-19500/374 for JANTXV grade, housed in a TO-111 package. Maximum collector-emitter voltage is 80 Vdc, collector-base voltage is 100 Vdc, and emitter-base voltage is 8.0 Vdc. Continuous collector current is 10 A, with base current limited to 0.5 A. Total power dissipation is 2.0 W at 25°C, derating linearly above that temperature. Thermal resistance from junction to case is 3.33°C/W. Operating and storage junction temperature range is -65°C to +200°C. Forward current transfer ratio ranges from 80 to 240 at 1.0 A collector current and 2.0 V collector-emitter voltage. Collector-emitter saturation voltage is 0.25 V at 1.0 A collector current and 0.1 A base current. Output capacitance is 150 pF at 10 V reverse bias and 100 kHz to 1 MHz frequency.