Microchip Technology, Inc. Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Arrays JANTXV2N3810

Description
Win Source Part Number: 1206518-JANTXV2N3810 Category: Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Arrays Series: Military, MIL-PRF-19500/336 Package: Bulk Standard Package: 1 Power - Max: 350mW Voltage - Collector Emitter Breakdown (Max): 60V Current - Collector (Ic) (Max): 50mA Transistor Type: 2 PNP (Dual) Vce Saturation (Max) @ Ib, Ic: 250mV @ 100µA, 1mA Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 1mA, 5V Mounting Type: Through Hole Package / Case: TO-78-6 Metal Can Supplier Device Package: TO-78-6 Temperature Range - Operating: -65°C ~ 200°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 81 pct. MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.21.0095 Mfr: Microchip Technology Other Names: 1086-3086,1086-3086- MIL Base Product Number: 2N3810 RoHS Status: RoHS non-compliant
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Description
Win Source Part Number: 1206518-JANTXV2N3810 Category: Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Arrays Series: Military, MIL-PRF-19500/336 Package: Bulk Standard Package: 1 Power - Max: 350mW Voltage - Collector Emitter Breakdown (Max): 60V Current - Collector (Ic) (Max): 50mA Transistor Type: 2 PNP (Dual) Vce Saturation (Max) @ Ib, Ic: 250mV @ 100µA, 1mA Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 1mA, 5V Mounting Type: Through Hole Package / Case: TO-78-6 Metal Can Supplier Device Package: TO-78-6 Temperature Range - Operating: -65°C ~ 200°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 81 pct. MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.21.0095 Mfr: Microchip Technology Other Names: 1086-3086,1086-3086- MIL Base Product Number: 2N3810 RoHS Status: RoHS non-compliant
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Suppliers

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Supplier Links
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Arrays - 1206518-JANTXV2N3810 - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Arrays
1206518-JANTXV2N3810
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Arrays 1206518-JANTXV2N3810
Win Source Part Number: 1206518-JANTXV2N3810 Category: Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Arrays Series: Military, MIL-PRF-19500/336 Package: Bulk Standard Package: 1 Power - Max: 350mW Voltage - Collector Emitter Breakdown (Max): 60V Current - Collector (Ic) (Max): 50mA Transistor Type: 2 PNP (Dual) Vce Saturation (Max) @ Ib, Ic: 250mV @ 100µA, 1mA Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 1mA, 5V Mounting Type: Through Hole Package / Case: TO-78-6 Metal Can Supplier Device Package: TO-78-6 Temperature Range - Operating: -65°C ~ 200°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 81 pct. MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.21.0095 Mfr: Microchip Technology Other Names: 1086-3086,1086-3086- MIL Base Product Number: 2N3810 RoHS Status: RoHS non-compliant

Win Source Part Number: 1206518-JANTXV2N3810
Category: Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Arrays
Series: Military, MIL-PRF-19500/336
Package: Bulk
Standard Package: 1
Power - Max: 350mW
Voltage - Collector Emitter Breakdown (Max): 60V
Current - Collector (Ic) (Max): 50mA
Transistor Type: 2 PNP (Dual)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 100µA, 1mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 1mA, 5V
Mounting Type: Through Hole
Package / Case: TO-78-6 Metal Can
Supplier Device Package: TO-78-6
Temperature Range - Operating: -65°C ~ 200°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 81 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.21.0095
Mfr: Microchip Technology
Other Names: 1086-3086,1086-3086-MIL
Base Product Number: 2N3810
RoHS Status: RoHS non-compliant

Buy Now Datasheet
Bipolar Transistor Arrays - 1086-3086-ND - DigiKey
Thief River Falls, MN, United States
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Bipolar (BJT) Transistor Array 2 PNP (Dual) 60V 50mA 350mW Through Hole TO-78-6

Bipolar (BJT) Transistor Array 2 PNP (Dual) 60V 50mA 350mW Through Hole TO-78-6

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - JANTXV2N3810 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
JANTXV2N3810
Discrete Semiconductor Products - Transistors - Bipolar (BJT) JANTXV2N3810
TRANS 2PNP 60V 0.05A TO78

TRANS 2PNP 60V 0.05A TO78

Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey Shenzhen Shengyu Electronics Technology Limited
Product Category Bipolar RF Transistors Transistors Bipolar RF Transistors
Product Number 1206518-JANTXV2N3810 1086-3086-ND JANTXV2N3810
Product Name Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Arrays Bipolar Transistor Arrays Discrete Semiconductor Products - Transistors - Bipolar (BJT)
Polarity PNP PNP
Package Type SOT3 TO-78-6 Metal Can TO-78-6
IC(max) 50 milliamps 50 milliamps
Power Gain 150 dB
Output Power 0.3500 watts
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