Microchip Technology, Inc. Bipolar Transistor Arrays JANTXV2N3810

Description
Bipolar (BJT) Transistor Array 2 PNP (Dual) 60V 50mA 350mW Through Hole TO-78-6
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Description
Bipolar (BJT) Transistor Array 2 PNP (Dual) 60V 50mA 350mW Through Hole TO-78-6
Request a Quote Datasheet

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Product
Description
Supplier Links
Bipolar Transistor Arrays - 1086-3086-ND - DigiKey
Thief River Falls, MN, United States
Bipolar Transistor Arrays
1086-3086-ND
Bipolar Transistor Arrays 1086-3086-ND
Bipolar (BJT) Transistor Array 2 PNP (Dual) 60V 50mA 350mW Through Hole TO-78-6

Bipolar (BJT) Transistor Array 2 PNP (Dual) 60V 50mA 350mW Through Hole TO-78-6

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Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Arrays - 1206518-JANTXV2N3810 - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Arrays
1206518-JANTXV2N3810
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Arrays 1206518-JANTXV2N3810
Win Source Part Number: 1206518-JANTXV2N3810 Category: Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Arrays Series: Military, MIL-PRF-19500/336 Package: Bulk Standard Package: 1 Power - Max: 350mW Voltage - Collector Emitter Breakdown (Max): 60V Current - Collector (Ic) (Max): 50mA Transistor Type: 2 PNP (Dual) Vce Saturation (Max) @ Ib, Ic: 250mV @ 100µA, 1mA Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 1mA, 5V Mounting Type: Through Hole Package / Case: TO-78-6 Metal Can Supplier Device Package: TO-78-6 Temperature Range - Operating: -65°C ~ 200°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 81 pct. MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.21.0095 Mfr: Microchip Technology Other Names: 1086-3086,1086-3086- MIL Base Product Number: 2N3810 RoHS Status: RoHS non-compliant

Win Source Part Number: 1206518-JANTXV2N3810
Category: Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Arrays
Series: Military, MIL-PRF-19500/336
Package: Bulk
Standard Package: 1
Power - Max: 350mW
Voltage - Collector Emitter Breakdown (Max): 60V
Current - Collector (Ic) (Max): 50mA
Transistor Type: 2 PNP (Dual)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 100µA, 1mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 1mA, 5V
Mounting Type: Through Hole
Package / Case: TO-78-6 Metal Can
Supplier Device Package: TO-78-6
Temperature Range - Operating: -65°C ~ 200°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 81 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.21.0095
Mfr: Microchip Technology
Other Names: 1086-3086,1086-3086-MIL
Base Product Number: 2N3810
RoHS Status: RoHS non-compliant

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Discrete Semiconductor Products - Transistors - Bipolar (BJT) - JANTXV2N3810 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
JANTXV2N3810
Discrete Semiconductor Products - Transistors - Bipolar (BJT) JANTXV2N3810
TRANS 2PNP 60V 0.05A TO78

TRANS 2PNP 60V 0.05A TO78

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Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Bipolar RF Transistors Bipolar RF Transistors
Product Number 1086-3086-ND 1206518-JANTXV2N3810 JANTXV2N3810
Product Name Bipolar Transistor Arrays Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Arrays Discrete Semiconductor Products - Transistors - Bipolar (BJT)
Polarity PNP PNP
Package Type TO-78-6 Metal Can SOT3 TO-78-6
Transistor Grade / Operating Range Military
IC(max) 50 milliamps 50 milliamps
Power Gain 150 dB
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