Microchip Technology, Inc. Bipolar Transistor Arrays JANTXV2N2919U/TR

NPN silicon dual transistor in surface mount package, rated for 60 V collector-emitter voltage, 30 mA collector current, and 350 mW total power dissipation with both sections active. Operating and storage junction temperature range is -65°C to +200°C. Minimum forward current transfer ratio is 60 at 10 μA collector current and 5.0 V collector-emitter voltage, rising to 300 at 1.0 mA. Collector-emitter saturation voltage is 0.3 V at 1.0 mA collector current and 100 μA base current. Includes output capacitance of 5.0 pF and noise figure of 3.0 dB at 1.0 kHz. Qualified per MIL-PRF-19500/355.