Microchip Technology, Inc. Single Bipolar Transistors JANTXV2N2907AUBP/TR

The JANTXV2N2907AUBP/TR is a PNP small signal silicon transistor in a surface-mount UB package, designed for general-purpose amplification and switching. It has a collector-emitter voltage rating of 60 Vdc, a continuous collector current of 600 mAdc, and a total power dissipation of 0.5 W at 25°C. The device operates over a junction temperature range of -65°C to +200°C. It meets MIL-PRF-19500/291 qualification standards. The UB package is a leadless surface-mount configuration with dimensions specified for pads 1 (base), 2 (emitter), 3 (collector), and 4 (shield connected to lid). The forward current gain (hFE) ranges from 100 to 300 at a collector current of 150 mA and collector-emitter voltage of 10 V, with a collector-emitter saturation voltage of up to 1.6 V at 500 mA collector current and 50 mA base current.