Microchip Technology, Inc. Single Bipolar Transistors JANTXV2N2484P

NPN silicon low-power transistor for high-reliability applications, packaged in TO-18, with a collector-emitter voltage rating of 60 Vdc, collector current of 50 mAdc, and total power dissipation of 360 mW at 25°C. Operating and storage junction temperature ranges from -65°C to +200°C. Qualified to MIL-PRF-19500/376 at JANTXV level. Thermal resistance junction-to-case is 146°C/W. Current gain (hFE) ranges from 200 to 800 at 10 mA collector current and 5 V collector-emitter voltage. Collector-emitter saturation voltage is 0.3 V at 1 mA collector and 100 mA base current.