Microchip Technology, Inc. Bipolar Transistor Arrays JANSR2N2920

JANSR2N2920 is a dual NPN silicon transistor in a TO-78 package, designed for general-purpose switching and amplification applications. It has a collector-emitter voltage rating of 60 Vdc, a collector current of 30 mAdc, and a total power dissipation of 350 mW when both sections are active. The device meets MIL-PRF-19500 qualification standards. Electrical characteristics include a forward current transfer ratio ranging from 175 to 600 at 10 μA collector current and 300 to 1000 at 1.0 mA collector current, with a collector-emitter saturation voltage of ≤ 0.3 Vdc and base-emitter saturation voltage of 0.5 to 1.0 Vdc. The operating and storage junction temperature range is -65°C to +200°C. The TO-78 package dimensions conform to the specified profile for six-lead configurations.