Microchip Technology, Inc. Bipolar Transistor Arrays JANS2N3810U/TR

Description
Bipolar (BJT) Transistor Array 2 PNP (Dual) 60V 50mA 350mW Surface Mount 6-SMD
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Description
Bipolar (BJT) Transistor Array 2 PNP (Dual) 60V 50mA 350mW Surface Mount 6-SMD
Request a Quote Datasheet

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Bipolar Transistor Arrays - 150-JANS2N3810U/TR-ND - DigiKey
Thief River Falls, MN, United States
Bipolar Transistor Arrays
150-JANS2N3810U/TR-ND
Bipolar Transistor Arrays 150-JANS2N3810U/TR-ND
Bipolar (BJT) Transistor Array 2 PNP (Dual) 60V 50mA 350mW Surface Mount 6-SMD

Bipolar (BJT) Transistor Array 2 PNP (Dual) 60V 50mA 350mW Surface Mount 6-SMD

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Arrays - 1206076-JANS2N3810U/TR - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Arrays
1206076-JANS2N3810U/TR
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Arrays 1206076-JANS2N3810U/TR
Win Source Part Number: 1206076-JANS2N3810U/ TR Category: Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Arrays Series: Military, MIL-PRF-19500/336 Package: Tape & Reel (TR) Standard Package: 1 Mounting: SMD (SMT) Power - Max: 350mW Voltage - Collector Emitter Breakdown (Max): 60V Current - Collector (Ic) (Max): 50mA Transistor Type: 2 PNP (Dual) Vce Saturation (Max) @ Ib, Ic: 250mV @ 100µA, 1mA Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 1mA, 5V Package / Case: 6-SMD, No Lead Supplier Device Package: 6-SMD Temperature Range - Operating: -65°C ~ 200°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 46 pct. HTSUS: 8541.21.0095 Mfr: Microchip Technology Other Names: 150-JANS2N3810U/TR

Win Source Part Number: 1206076-JANS2N3810U/TR
Category: Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Arrays
Series: Military, MIL-PRF-19500/336
Package: Tape & Reel (TR)
Standard Package: 1
Mounting: SMD (SMT)
Power - Max: 350mW
Voltage - Collector Emitter Breakdown (Max): 60V
Current - Collector (Ic) (Max): 50mA
Transistor Type: 2 PNP (Dual)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 100µA, 1mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 1mA, 5V
Package / Case: 6-SMD, No Lead
Supplier Device Package: 6-SMD
Temperature Range - Operating: -65°C ~ 200°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 46 pct.
HTSUS: 8541.21.0095
Mfr: Microchip Technology
Other Names: 150-JANS2N3810U/TR

Buy Now
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - JANS2N3810U/TR - Acme Chip Technology Co., Limited
Shenzhen, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
JANS2N3810U/TR
Discrete Semiconductor Products - Transistors - Bipolar (BJT) JANS2N3810U/TR
TRANSISTOR DUAL SMALL-SIGNAL BJT

TRANSISTOR DUAL SMALL-SIGNAL BJT

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics Acme Chip Technology Co., Limited
Product Category Transistors Bipolar RF Transistors Bipolar RF Transistors
Product Number 150-JANS2N3810U/TR-ND 1206076-JANS2N3810U/TR JANS2N3810U/TR
Product Name Bipolar Transistor Arrays Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Arrays Discrete Semiconductor Products - Transistors - Bipolar (BJT)
Polarity PNP PNP
Package Type 6-SMD, No Lead SOT3 MIL-PRF-19500/336
Transistor Grade / Operating Range Military
IC(max) 50 milliamps 50 milliamps
Power Gain 150 dB
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