Microchip Technology, Inc. Single Bipolar Transistors JANS2N3637UB

Description
Bipolar (BJT) Transistor PNP 175V 1A 1.5W Surface Mount UB
Request a Quote Datasheet
Description
Bipolar (BJT) Transistor PNP 175V 1A 1.5W Surface Mount UB
Request a Quote Datasheet

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Product
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Single Bipolar Transistors - 1086-16120-ND - DigiKey
Thief River Falls, MN, United States
Single Bipolar Transistors
1086-16120-ND
Single Bipolar Transistors 1086-16120-ND
Bipolar (BJT) Transistor PNP 175V 1A 1.5W Surface Mount UB

Bipolar (BJT) Transistor PNP 175V 1A 1.5W Surface Mount UB

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single Bipolar Transistors - 1382400-JANS2N3637UB - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single Bipolar Transistors
1382400-JANS2N3637UB
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single Bipolar Transistors 1382400-JANS2N3637UB
Win Source Part Number: 1382400-JANS2N3637UB Category: Discrete Semiconductor Products>Transistors >Bipolar (BJT)>Single Bipolar Transistors Series: Military, MIL-PRF-19500/357 Package: Bulk Standard Package: 1 pcs Power - Max: 1.5 W Voltage - Collector Emitter Breakdown (Max): 175 V Current - Collector (Ic) (Max): 1 A Transistor Type: PNP Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 50mA Current - Collector Cutoff (Max): 10µA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 10V Mounting Type: Surface Mount Package / Case: 3-SMD, No Lead Supplier Device Package: UB Temperature Range - Operating: -65°C ~ 200°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 60 pct. REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Mfr: Microchip Technology Base Product Number: 2N3637 RoHS Status: RoHS non-compliant Moisture Sensitivity Level (MSL): 1 (Unlimited)

Win Source Part Number: 1382400-JANS2N3637UB
Category: Discrete Semiconductor Products>Transistors>Bipolar (BJT)>Single Bipolar Transistors
Series: Military, MIL-PRF-19500/357
Package: Bulk
Standard Package: 1 pcs
Power - Max: 1.5 W
Voltage - Collector Emitter Breakdown (Max): 175 V
Current - Collector (Ic) (Max): 1 A
Transistor Type: PNP
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 10V
Mounting Type: Surface Mount
Package / Case: 3-SMD, No Lead
Supplier Device Package: UB
Temperature Range - Operating: -65°C ~ 200°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 60 pct.
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: Microchip Technology
Base Product Number: 2N3637
RoHS Status: RoHS non-compliant
Moisture Sensitivity Level (MSL): 1 (Unlimited)

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - JANS2N3637UB - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
JANS2N3637UB
Discrete Semiconductor Products - Transistors - Bipolar (BJT) JANS2N3637UB
TRANS PNP 175V 1A UB

TRANS PNP 175V 1A UB

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Bipolar RF Transistors Bipolar RF Transistors
Product Number 1086-16120-ND 1382400-JANS2N3637UB JANS2N3637UB
Product Name Single Bipolar Transistors Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single Bipolar Transistors Discrete Semiconductor Products - Transistors - Bipolar (BJT)
Polarity PNP PNP
Package Type 3-SMD, No Lead SOT3 MIL-PRF-19500/357
Transistor Grade / Operating Range Military
IC(max) 1000 milliamps 1000 milliamps
Power Gain 100 dB
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