Microchip Technology, Inc. Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single JANS2N3637UB/TR

Description
Win Source Part Number: 1184018-JANS2N3637UB /TR Category: Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Single Series: Military, MIL-PRF-19500/357 Package: Tape & Reel (TR) Standard Package: 1 Mounting: SMD (SMT) Power - Max: 1.5 W Voltage - Collector Emitter Breakdown (Max): 175 V Current - Collector (Ic) (Max): 1 A Transistor Type: PNP Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 50mA Current - Collector Cutoff (Max): 10µA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 10V Package / Case: 3-SMD, No Lead Supplier Device Package: UB Temperature Range - Operating: -65°C ~ 200°C (TJ) Alternative Parts (Cross-Reference): JANS2N3637UB-TR; JANS2N3637UB/T/R; JANS2N3637UBTR; ECCN: EAR99 Fake Threat In the Open Market: 81 pct. HTSUS: 8541.29.0095 Mfr: Microchip Technology Other Names: 150-JANS2N3637UB/TR
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Description
Win Source Part Number: 1184018-JANS2N3637UB /TR Category: Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Single Series: Military, MIL-PRF-19500/357 Package: Tape & Reel (TR) Standard Package: 1 Mounting: SMD (SMT) Power - Max: 1.5 W Voltage - Collector Emitter Breakdown (Max): 175 V Current - Collector (Ic) (Max): 1 A Transistor Type: PNP Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 50mA Current - Collector Cutoff (Max): 10µA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 10V Package / Case: 3-SMD, No Lead Supplier Device Package: UB Temperature Range - Operating: -65°C ~ 200°C (TJ) Alternative Parts (Cross-Reference): JANS2N3637UB-TR; JANS2N3637UB/T/R; JANS2N3637UBTR; ECCN: EAR99 Fake Threat In the Open Market: 81 pct. HTSUS: 8541.29.0095 Mfr: Microchip Technology Other Names: 150-JANS2N3637UB/TR
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Suppliers

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Product
Description
Supplier Links
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single - 1184018-JANS2N3637UB/TR - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single
1184018-JANS2N3637UB/TR
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single 1184018-JANS2N3637UB/TR
Win Source Part Number: 1184018-JANS2N3637UB /TR Category: Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Single Series: Military, MIL-PRF-19500/357 Package: Tape & Reel (TR) Standard Package: 1 Mounting: SMD (SMT) Power - Max: 1.5 W Voltage - Collector Emitter Breakdown (Max): 175 V Current - Collector (Ic) (Max): 1 A Transistor Type: PNP Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 50mA Current - Collector Cutoff (Max): 10µA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 10V Package / Case: 3-SMD, No Lead Supplier Device Package: UB Temperature Range - Operating: -65°C ~ 200°C (TJ) Alternative Parts (Cross-Reference): JANS2N3637UB-TR; JANS2N3637UB/T/R; JANS2N3637UBTR; ECCN: EAR99 Fake Threat In the Open Market: 81 pct. HTSUS: 8541.29.0095 Mfr: Microchip Technology Other Names: 150-JANS2N3637UB/TR

Win Source Part Number: 1184018-JANS2N3637UB/TR
Category: Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Single
Series: Military, MIL-PRF-19500/357
Package: Tape & Reel (TR)
Standard Package: 1
Mounting: SMD (SMT)
Power - Max: 1.5 W
Voltage - Collector Emitter Breakdown (Max): 175 V
Current - Collector (Ic) (Max): 1 A
Transistor Type: PNP
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 10V
Package / Case: 3-SMD, No Lead
Supplier Device Package: UB
Temperature Range - Operating: -65°C ~ 200°C (TJ)
Alternative Parts (Cross-Reference): JANS2N3637UB-TR; JANS2N3637UB/T/R; JANS2N3637UBTR;
ECCN: EAR99
Fake Threat In the Open Market: 81 pct.
HTSUS: 8541.29.0095
Mfr: Microchip Technology
Other Names: 150-JANS2N3637UB/TR

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Technical Specifications

  Win Source Electronics DigiKey Acme Chip Technology Co., Limited
Product Category Bipolar RF Transistors Transistors Bipolar RF Transistors
Product Number 1184018-JANS2N3637UB/TR 150-JANS2N3637UB/TR-ND JANS2N3637UB/TR
Product Name Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single Single Bipolar Transistors Discrete Semiconductor Products - Transistors - Bipolar (BJT)
Polarity PNP PNP
Package Type SOT3 3-SMD, No Lead
IC(max) 1000 milliamps 1000 milliamps
Power Gain 100 dB
Output Power 1.5 watts
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