Microchip Technology, Inc. Single Bipolar Transistors JANS2N3637UB/TR

Description
Bipolar (BJT) Transistor PNP 175V 1A 1.5W Surface Mount UB
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Description
Bipolar (BJT) Transistor PNP 175V 1A 1.5W Surface Mount UB
Request a Quote Datasheet

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Single Bipolar Transistors - 150-JANS2N3637UB/TR-ND - DigiKey
Thief River Falls, MN, United States
Single Bipolar Transistors
150-JANS2N3637UB/TR-ND
Single Bipolar Transistors 150-JANS2N3637UB/TR-ND
Bipolar (BJT) Transistor PNP 175V 1A 1.5W Surface Mount UB

Bipolar (BJT) Transistor PNP 175V 1A 1.5W Surface Mount UB

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single - 1184018-JANS2N3637UB/TR - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single
1184018-JANS2N3637UB/TR
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single 1184018-JANS2N3637UB/TR
Win Source Part Number: 1184018-JANS2N3637UB /TR Category: Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Single Series: Military, MIL-PRF-19500/357 Package: Tape & Reel (TR) Standard Package: 1 Mounting: SMD (SMT) Power - Max: 1.5 W Voltage - Collector Emitter Breakdown (Max): 175 V Current - Collector (Ic) (Max): 1 A Transistor Type: PNP Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 50mA Current - Collector Cutoff (Max): 10µA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 10V Package / Case: 3-SMD, No Lead Supplier Device Package: UB Temperature Range - Operating: -65°C ~ 200°C (TJ) Alternative Parts (Cross-Reference): JANS2N3637UB-TR; JANS2N3637UB/T/R; JANS2N3637UBTR; ECCN: EAR99 Fake Threat In the Open Market: 81 pct. HTSUS: 8541.29.0095 Mfr: Microchip Technology Other Names: 150-JANS2N3637UB/TR

Win Source Part Number: 1184018-JANS2N3637UB/TR
Category: Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Single
Series: Military, MIL-PRF-19500/357
Package: Tape & Reel (TR)
Standard Package: 1
Mounting: SMD (SMT)
Power - Max: 1.5 W
Voltage - Collector Emitter Breakdown (Max): 175 V
Current - Collector (Ic) (Max): 1 A
Transistor Type: PNP
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 10V
Package / Case: 3-SMD, No Lead
Supplier Device Package: UB
Temperature Range - Operating: -65°C ~ 200°C (TJ)
Alternative Parts (Cross-Reference): JANS2N3637UB-TR; JANS2N3637UB/T/R; JANS2N3637UBTR;
ECCN: EAR99
Fake Threat In the Open Market: 81 pct.
HTSUS: 8541.29.0095
Mfr: Microchip Technology
Other Names: 150-JANS2N3637UB/TR

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Discrete Semiconductor Products - Transistors - Bipolar (BJT) - JANS2N3637UB/TR - Acme Chip Technology Co., Limited
Shenzhen, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
JANS2N3637UB/TR
Discrete Semiconductor Products - Transistors - Bipolar (BJT) JANS2N3637UB/TR
TRANS PNP 175V 1A UB

TRANS PNP 175V 1A UB

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics Acme Chip Technology Co., Limited
Product Category Transistors Bipolar RF Transistors Bipolar RF Transistors
Product Number 150-JANS2N3637UB/TR-ND 1184018-JANS2N3637UB/TR JANS2N3637UB/TR
Product Name Single Bipolar Transistors Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single Discrete Semiconductor Products - Transistors - Bipolar (BJT)
Polarity PNP PNP
Package Type 3-SMD, No Lead SOT3
Transistor Grade / Operating Range Military
IC(max) 1000 milliamps 1000 milliamps
Power Gain 100 dB
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