Microchip Technology, Inc. Single Bipolar Transistors JANS2N3507

The JANS2N3507 is a high-frequency NPN silicon transistor for medium power and high-reliability applications, housed in a TO-39 package. It has a collector-emitter voltage rating of 50 V, a collector-base voltage rating of 80 V, and a maximum collector current of 3.0 A. The device exhibits a collector-emitter saturation voltage of 1.0 V at 1.5 A collector current and 150 mA base current, with a rise time of 30 ns and fall time of 35 ns under the same conditions. Thermal resistance junction-to-case is 18 °C/W. It is qualified per MIL-PRF-19500/349 and features a hermetically sealed kovar package with nickel-plated leads. The operating and storage junction temperature range is -65 to +200 °C.