Microchip Technology, Inc. Single Bipolar Transistors JANS2N3506

The JANS2N3506 is a high-frequency NPN silicon transistor for medium power applications, qualified to MIL-PRF-19500/349 and available in a hermetically sealed TO-39 (TO-205AD) package. It features a collector-emitter voltage rating of 40 V, a continuous collector current of 3.0 A, and a power dissipation of 1.5 W at +25 °C. The device has a collector-emitter saturation voltage of 0.5 V at IC = 500 mA and IB = 50 mA, with a typical rise time of 30 ns and fall time of 35 ns at IC = 1.5 A. Thermal resistance junction-to-case is 18 °C/W, and the operating junction temperature range is -65 to +200 °C. The TO-39 package is kovar-based with nickel-plated leads and solder dip finish. Military-grade reliability is assured through JANTXV qualification levels.